SCHEMBL2102932

SCHEMBL2102932

CCN[SiH](NCC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.38
TP53 P04637 1/20 0.36
SIGMAR1 Q99720 1/20 0.34
LMNA P02545 2/20 0.32
TDP1 Q9NUW8 1/20 0.32
HTR1B P28222 1/20 0.32
GAA P10253 3/20 0.31
MAPT P10636 2/20 0.31
KDM4E B2RXH2 2/20 0.31
CYP3A4 P08684 1/20 0.31
PSIP1 O75475 1/20 0.31
TSHR P16473 1/20 0.31
HPGD P15428 2/20 0.31
ALDH1A1 P00352 2/20 0.31
ALPL P05186 1/20 0.31
ALOX12 P18054 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
AOC3 Q16853 1/20 0.30
ATM Q13315 1/20 0.30
TAAR1 Q96RJ0 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2268660 0.80 KCNN4 (0.38) KCNN4TP53SIGMAR1LMNATDP1
SCHEMBL2274480 0.78 KCNN4 (0.37) KCNN4TP53SIGMAR1LMNATDP1
SCHEMBL2269967 0.76 KCNN4 (0.35) KCNN4TP53SIGMAR1LMNATDP1
SCHEMBL2104143 0.76 KCNN4 (0.35) KCNN4TP53SIGMAR1LMNATDP1
SCHEMBL2102700 0.75 KCNN4 (0.34) KCNN4TP53SIGMAR1TDP1TSHR
SCHEMBL2268944 0.73 KCNN4 (0.38) KCNN4TP53SIGMAR1LMNAGAA
SCHEMBL2267110 0.73 KCNN4 (0.33) KCNN4TP53SIGMAR1GAAKDM4E
SCHEMBL2268854 0.73 SIGMAR1 (0.38) KCNN4TP53SIGMAR1LMNATDP1
SCHEMBL2274702 0.72 KCNN4 (0.32) KCNN4TP53TSHRALDH1A1
SCHEMBL2101602 0.70 TSHR (0.41) KCNN4SIGMAR1LMNATDP1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
EP-0273456-A2 Vapor phase alcoholysis of aminosilanes and carbamatosilanes UNION CARBIDE CORPORATION (US) 1988-07-06 EP disclosed
US-4730074-A Vapor phase alcoholysis of aminosilanes and carbamatosilanes UNION CARBIDE CORPORATION (US) 1988-03-08 US disclosed
EP-0098912-B1 PROCESS FOR THE PREPARATION OF ALKOXYHYDRIDOSILANES UNION CARBIDE CORPORATION (US) 1986-04-23 EP disclosed
EP-0098911-B1 IMPROVED PROCESS FOR THE PREPARATION OF OXIMATOHYDRIDOSILANES AND AMINOXYHYDRIDOSILANES UNION CARBIDE CORPORATION (US) 1986-04-16 EP disclosed
EP-0098911-A1 Improved process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1984-01-25 EP disclosed
EP-0098912-A1 Process for the preparation of alkoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1984-01-25 EP disclosed
US-4395564-A REACTING AN ALCOHOL WITH SILYL-AMINE UNION CARBIDE CORPORATION (US) 1983-07-26 US disclosed
US-4384131-A Process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1983-05-17 US disclosed