SCHEMBL2102973

SCHEMBL2102973

CCNc1cccc(C([SiH3])CC)c1NCC

nearest known ligand 0.34

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.34
USP2 O75604 1/20 0.34
CASP1 P29466 1/20 0.34
BRCA1 P38398 1/20 0.34
CASP7 P55210 1/20 0.34
KMT2A Q03164 1/20 0.34
CYP3A4 P08684 1/20 0.33
TSHR P16473 1/20 0.33
RECQL P46063 1/20 0.33
IDO1 P14902 2/20 0.32
GRM5 P41594 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2267117 0.84 IDO1 (0.38) MEN1USP2CASP1BRCA1CASP7
SCHEMBL2103218 0.81 CXCL8 (0.34) USP2CYP3A4
SCHEMBL2101647 0.77 MAPT (0.33) USP2RECQL
SCHEMBL8164568 0.77 MEN1 (0.44) MEN1USP2CASP1BRCA1CASP7
SCHEMBL2102937 0.72 MEN1 (0.39) MEN1USP2CASP1BRCA1CASP7
SCHEMBL2102171 0.71 TSHR (0.31) TSHR
SCHEMBL2267572 0.71 L3MBTL1 (0.38) USP2KMT2ATSHRRECQL
SCHEMBL9233119 0.70 TSHR (0.44) TSHRIDO1
SCHEMBL8762491 0.70 CYP3A4 (0.47) MEN1USP2CASP1BRCA1CASP7
SCHEMBL526384 0.70 IDO1 (0.52) MEN1USP2CASP1BRCA1CASP7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed