SCHEMBL2103218

SCHEMBL2103218

CCNc1c(Cl)cccc1C([SiH3])CC

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CXCL8 P10145 4/20 0.34
CYP2D6 P10635 2/20 0.33
NFKB1 P19838 2/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
PNMT P11086 1/20 0.33
MAPK14 Q16539 1/20 0.33
ALDH1A1 P00352 2/20 0.33
LMNA P02545 2/20 0.33
TAS1R3 Q7RTX0 1/20 0.33
TAS1R1 Q7RTX1 1/20 0.33
TAS1R2 Q8TE23 1/20 0.33
MITF O75030 1/20 0.33
USP2 O75604 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
HTT P42858 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
GLA P06280 1/20 0.33
ADRB2 P07550 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102181 0.85 CXCL8 (0.35) CXCL8CYP2D6NFKB1CYP1A2CYP3A4
SCHEMBL2102973 0.81 MEN1 (0.34) CYP3A4USP2
SCHEMBL7350648 0.78 CYP1A2 (0.43) CYP1A2MAPK14ALDH1A1LMNAMITF
SCHEMBL2102355 0.77 PNMT (0.52) CYP2D6NFKB1CYP1A2CYP3A4PNMT
SCHEMBL2272069 0.76 NISCH (0.44) CYP2D6NFKB1CYP1A2CYP3A4PNMT
SCHEMBL2104146 0.73 MAPK14 (0.39) CYP1A2MAPK14ALDH1A1LMNAMITF
SCHEMBL2267117 0.72 IDO1 (0.38) CYP3A4ALDH1A1LMNAMITFUSP2
SCHEMBL2102663 0.71 NISCH (0.38) CYP2D6NFKB1CYP1A2CYP3A4PNMT
SCHEMBL5047053 0.71 LCK (0.40) CXCL8CYP3A4MAPK14ALDH1A1LMNA
SCHEMBL11663327 0.71 MAPK14 (0.49) CXCL8CYP3A4MAPK14ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed