SCHEMBL2103435

SCHEMBL2103435

CCNC(NCC)N[SiH2]c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 2/20 0.41
HTT P42858 1/20 0.33
KCNN4 O15554 1/20 0.32
CYP1A2 P05177 1/20 0.31
CYP3A4 P08684 1/20 0.31
CYP2D6 P10635 1/20 0.31
TSHR P16473 1/20 0.31
MTOR P42345 1/20 0.30
RAB9A P51151 1/20 0.30
GRM7 Q14831 1/20 0.30
PKM P14618 1/20 0.30
TP53 P04637 1/20 0.30
MAPT P10636 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6114335 0.72 TDP1 (0.42) SIGMAR1CYP1A2CYP3A4CYP2D6TSHR
SCHEMBL2269128 0.72 KCNN4 (0.38) SIGMAR1KCNN4CYP3A4TSHRPKM
SCHEMBL234049 0.71 SIGMAR1 (0.44) SIGMAR1KCNN4CYP3A4TSHRMTOR
SCHEMBL2103031 0.71 PGR (0.37) SIGMAR1CYP2D6
SCHEMBL2099562 0.69 SIGMAR1 (0.42) SIGMAR1HTTKCNN4CYP3A4TSHR
SCHEMBL2100214 0.68 SIGMAR1 (0.41) SIGMAR1HTTKCNN4TSHRMTOR
SCHEMBL2101330 0.67 KDM4E (0.32)
SCHEMBL2270806 0.65 SIGMAR1 (0.39) SIGMAR1KCNN4
SCHEMBL2103176 0.65 SIGMAR1 (0.39) SIGMAR1HTTKCNN4CYP1A2CYP3A4
SCHEMBL2103327 0.65 HTT (0.33) SIGMAR1HTTKCNN4CYP3A4TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed