SCHEMBL2102969

SCHEMBL2102969

CCC[Si](NCC)(NCC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 3/20 0.35
ALDH1A1 P00352 2/20 0.35
HPGD P15428 2/20 0.35
KDM4E B2RXH2 2/20 0.35
KCNN4 O15554 1/20 0.34
MAPT P10636 1/20 0.32
NR1H2 P55055 1/20 0.32
NR1H3 Q13133 1/20 0.32
KMT2A Q03164 1/20 0.32
TP53 P04637 1/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
ALPL P05186 1/20 0.32
ALOX12 P18054 1/20 0.32
SIGMAR1 Q99720 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
NAAA Q02083 1/20 0.31
HTT P42858 1/20 0.31
POLB P06746 1/20 0.30
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103831 0.88 NAAA (0.36) GAAALDH1A1HPGDKDM4EMAPT
SCHEMBL2101644 0.83 NR1H2 (0.32) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2099561 0.82 KCNN4 (0.37) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2103213 0.79 GAA (0.34) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2272798 0.78 GAA (0.35) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2269776 0.75 GAA (0.33) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2268318 0.74 SIGMAR1 (0.36) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2100450 0.72 ALDH1A1 (0.32) GAAALDH1A1HPGDKDM4EKCNN4
SCHEMBL2099742 0.72 NAAA (0.34) GAAALDH1A1HPGDKDM4EMAPT
SCHEMBL2102177 0.72 KCNN4 (0.39) GAAALDH1A1HPGDKDM4EKCNN4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed