SCHEMBL2103402

SCHEMBL2103402

CCN(CC)[Si](c1ccccc1)(C(C)C)N(C)C

nearest known ligand 0.33

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
MAOA P21397 3/20 0.33
MAOB P27338 3/20 0.33
NISCH Q9Y2I1 3/20 0.33
HTR2A P28223 3/20 0.33
HRH1 P35367 2/20 0.33
ADRA2B P18089 2/20 0.33
KCNH2 Q12809 2/20 0.33
PGR P06401 1/20 0.33
ADRA2A P08913 1/20 0.33
AOC3 Q16853 1/20 0.32
ADRA2C P18825 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
ADRA1A P35348 1/20 0.31
OPRK1 P41145 1/20 0.31
SLC6A3 Q01959 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
SIGMAR1 Q99720 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102703 0.90 ADRA2A (0.35) MAOAHTR2AHRH1ADRA2BKCNH2
SCHEMBL2103364 0.86 PGR (0.31) HTR2AHRH1ADRA2BKCNH2PGR
SCHEMBL2101013 0.84 ALDH1A1 (0.34) MAOAMAOBNISCHHTR2AHRH1
SCHEMBL2101581 0.79 PGR (0.33) HTR2AHRH1ADRA2BKCNH2PGR
SCHEMBL2103058 0.77 GRIN1 (0.33) MAOAMAOBNISCHHTR2AHRH1
SCHEMBL2272622 0.75 KCNH2 (0.35) MAOAHTR2AHRH1ADRA2BKCNH2
SCHEMBL11127633 0.74 TSHR (0.34) HTR2AHRH1KCNH2ADRA2AAOC3
SCHEMBL2102030 0.72 CHRM2 (0.35) KCNH2ADRA2AAOC3SLC6A2SLC6A4
SCHEMBL2101677 0.72 TSHR (0.33) HTR2AHRH1KCNH2ADRA2AAOC3
SCHEMBL2101178 0.72 TSHR (0.33) HTR2AHRH1KCNH2ADRA2AAOC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed