SCHEMBL2103364

SCHEMBL2103364

CCC(C)[Si](c1ccccc1)(N(C)C)N(CC)CC

nearest known ligand 0.31

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
PGR P06401 1/20 0.31
ADRA2A P08913 1/20 0.31
ADRA2B P18089 1/20 0.31
HTR2A P28223 1/20 0.31
HRH1 P35367 1/20 0.31
KCNH2 Q12809 1/20 0.31
GRIN1 Q05586 4/20 0.30
GRIN2A Q12879 4/20 0.30
GRIN2D O15399 3/20 0.30
GRIN2C Q14957 3/20 0.30
GRIN2B Q13224 2/20 0.30
AOC3 Q16853 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101581 0.91 PGR (0.33) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2103058 0.89 GRIN1 (0.33) ADRA2BHTR2AHRH1KCNH2GRIN1
SCHEMBL2103402 0.86 MAOA (0.33) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2102703 0.80 ADRA2A (0.35) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2272374 0.77 ADRA2B (0.33) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2272716 0.74 GRIN1 (0.33) ADRA2BHTR2AHRH1KCNH2GRIN1
SCHEMBL2102084 0.74 PGR (0.32) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2101013 0.73 ALDH1A1 (0.34) ADRA2AADRA2BHTR2AHRH1KCNH2
SCHEMBL2101028 0.71 AOC3 (0.32) ADRA2BHTR2AHRH1KCNH2GRIN1
SCHEMBL11127633 0.71 TSHR (0.34) ADRA2AHTR2AHRH1KCNH2AOC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed