SCHEMBL2103058

SCHEMBL2103058

CCC(C)[Si](c1ccccc1)(N(C)C)N(C)C

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GRIN1 Q05586 4/20 0.33
GRIN2A Q12879 4/20 0.33
GRIN2D O15399 3/20 0.33
GRIN2C Q14957 3/20 0.33
HTR2A P28223 3/20 0.33
AOC3 Q16853 2/20 0.33
GRIN2B Q13224 2/20 0.33
HRH1 P35367 2/20 0.33
LMNA P02545 1/20 0.33
TRPA1 O75762 1/20 0.32
ADRA2B P18089 1/20 0.32
ADRA2C P18825 1/20 0.32
SLC6A2 P23975 1/20 0.32
SLC6A4 P31645 1/20 0.32
ADRA1A P35348 1/20 0.32
OPRK1 P41145 1/20 0.32
SLC6A3 Q01959 1/20 0.32
KCNH2 Q12809 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
TSHR P16473 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103364 0.89 PGR (0.31) GRIN1GRIN2AGRIN2DGRIN2CHTR2A
SCHEMBL2101581 0.82 PGR (0.33) HTR2AHRH1LMNATRPA1ADRA2B
SCHEMBL2272716 0.80 GRIN1 (0.33) GRIN1GRIN2AGRIN2DGRIN2CHTR2A
SCHEMBL2101013 0.79 ALDH1A1 (0.34) HTR2AAOC3HRH1ADRA2BADRA2C
SCHEMBL2103402 0.77 MAOA (0.33) HTR2AAOC3HRH1ADRA2BADRA2C
SCHEMBL2101028 0.77 AOC3 (0.32) GRIN1GRIN2AGRIN2DGRIN2CHTR2A
SCHEMBL2103846 0.76 SIGMAR1 (0.34) GRIN1GRIN2AGRIN2DGRIN2CHTR2A
SCHEMBL2272879 0.74 GRIN1 (0.30) GRIN1GRIN2AGRIN2DGRIN2CAOC3
SCHEMBL27848783 0.74 LMNA (0.38) LMNATRPA1SLC6A2SLC6A4SLC6A3
SCHEMBL25697085 0.74 LMNA (0.38) LMNATRPA1SLC6A2SLC6A4SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed