SCHEMBL2103687

SCHEMBL2103687

C=C([SiH3])c1ccccc1NCN(CC)CC

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHEK1 O14757 1/20 0.34
PIM1 P11309 1/20 0.34
IDO1 P14902 1/20 0.34
LTK P29376 1/20 0.34
LIMK1 P53667 1/20 0.34
CLK4 Q9HAZ1 1/20 0.34
ABCC1 P33527 1/20 0.34
ADRA1A P35348 7/20 0.33
ADRA1D P25100 6/20 0.33
ADRA1B P35368 6/20 0.33
KDM4E B2RXH2 3/20 0.33
ALDH1A1 P00352 3/20 0.33
HPGD P15428 2/20 0.33
GLA P06280 1/20 0.33
HSD17B10 Q99714 1/20 0.32
HTT P42858 1/20 0.31
AGTR1 P30556 1/20 0.31
RAB9A P51151 1/20 0.31
PLK1 P53350 1/20 0.31
BCHE P06276 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2274708 0.81 IDO1 (0.42) IDO1ADRA1AADRA1DADRA1BKDM4E
SCHEMBL2101112 0.75 KDM4E (0.34) IDO1ADRA1AADRA1DADRA1BKDM4E
SCHEMBL2101825 0.74 CHEK1 (0.35) CHEK1PIM1IDO1LTKLIMK1
SCHEMBL3923050 0.74 MAPT (0.46) CHEK1PIM1IDO1LTKLIMK1
SCHEMBL2270403 0.71 POLB (0.52) IDO1KDM4EALDH1A1HPGDHSD17B10
SCHEMBL2100484 0.68 CACNA2D1 (0.33) CHEK1PIM1IDO1LTKLIMK1
SCHEMBL2277488 0.67 TP53 (0.34) ALDH1A1HTTRAB9A
SCHEMBL2103468 0.67 CYP3A4 (0.36) IDO1ALDH1A1HTT
SCHEMBL3572170 0.65 ALDH1A1 (0.44) ADRA1AKDM4EALDH1A1RAB9A
SCHEMBL2557198 0.65 IDO1 (0.43) IDO1ADRA1AADRA1DADRA1BKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed