SCHEMBL2104427

SCHEMBL2104427

C=C[Si](NC)(NC)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.33
TSHR P16473 2/20 0.33
HSD17B10 Q99714 2/20 0.32
KDM4E B2RXH2 1/20 0.32
USP2 O75604 1/20 0.32
POLB P06746 1/20 0.32
MAPT P10636 1/20 0.32
HPGD P15428 1/20 0.32
RECQL P46063 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
HDAC8 Q9BY41 1/20 0.30
KCNN4 O15554 1/20 0.30
IDH1 O75874 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103464 0.78 KCNN4 (0.33) ALDH1A1TSHRKDM4EMAPTHPGD
SCHEMBL2269681 0.77 ALDH1A1 (0.33) ALDH1A1TSHRESR1ESR2HDAC8
SCHEMBL2101781 0.74 TSHR (0.31) ALDH1A1TSHR
SCHEMBL2273625 0.71 ALDH1A1 (0.31) ALDH1A1KCNN4
SCHEMBL2267732 0.71 ALDH1A1 (0.31) ALDH1A1TDP1
SCHEMBL2524118 0.69 ESR1 (0.39) ALDH1A1TSHRMAPTHPGDESR1
SCHEMBL453982 0.69 NR1H2 (0.48) ALDH1A1TSHRMAPTESR1ESR2
SCHEMBL160355 0.69 ESR1 (0.39) ALDH1A1TSHRKDM4EMAPTHPGD
SCHEMBL725270 0.68 ESR1 (0.35) ALDH1A1TSHRMAPTESR1ESR2
SCHEMBL14955207 0.68 ALDH1A1 (0.33) ALDH1A1TSHRKDM4EMAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed