SCHEMBL2103024

SCHEMBL2103024

CCN[Si](c1ccccc1)(C(C)C)N(C)C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 3/20 0.36
OPRM1 P35372 1/20 0.34
OPRL1 P41146 1/20 0.34
HTR2A P28223 3/20 0.32
HRH1 P35367 2/20 0.32
AOC3 Q16853 1/20 0.32
NPY5R Q15761 1/20 0.32
HTT P42858 1/20 0.32
ADRA2B P18089 1/20 0.32
ADRA2C P18825 1/20 0.32
SLC6A2 P23975 1/20 0.32
SLC6A4 P31645 1/20 0.32
ADRA1A P35348 1/20 0.32
OPRK1 P41145 1/20 0.32
SLC6A3 Q01959 1/20 0.32
KCNH2 Q12809 1/20 0.32
TDP1 Q9NUW8 1/20 0.31
KCNN4 O15554 1/20 0.31
MTOR P42345 1/20 0.31
TAAR1 Q96RJ0 3/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103846 0.85 SIGMAR1 (0.34) SIGMAR1HTR2AHRH1AOC3NPY5R
SCHEMBL2104720 0.74 SIGMAR1 (0.39) SIGMAR1AOC3HTTSLC6A2SLC6A4
SCHEMBL2269102 0.74 SIGMAR1 (0.39) SIGMAR1AOC3HTTSLC6A2SLC6A4
SCHEMBL2101901 0.74 KCNN4 (0.34) SIGMAR1HTR2AHRH1AOC3HTT
SCHEMBL2101654 0.74 KCNN4 (0.34) SIGMAR1OPRM1OPRL1HTR2AHRH1
SCHEMBL2103088 0.74 KCNN4 (0.34) SIGMAR1HTR2AHRH1AOC3HTT
SCHEMBL2270811 0.72 KCNN4 (0.38) SIGMAR1HTR2AHRH1AOC3KCNN4
SCHEMBL2103963 0.71 KCNN4 (0.32) KCNN4ALDH1A1TSHR
SCHEMBL2103257 0.71 KCNN4 (0.32) HTTKCNN4ALDH1A1TSHR
SCHEMBL2102370 0.71 SIGMAR1 (0.37) SIGMAR1OPRM1HTR2AHRH1AOC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed