Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 5/20 | 0.69 |
| ▸ | KMT2A | Q03164 | 5/20 | 0.69 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.69 |
| ▸ | HPGD | P15428 | 2/20 | 0.69 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.69 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.69 |
| ▸ | GLA | P06280 | 1/20 | 0.69 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.69 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.69 |
| ▸ | ATM | Q13315 | 1/20 | 0.52 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.52 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.52 |
| ▸ | HTT | P42858 | 1/20 | 0.47 |
| ▸ | NPC1 | O15118 | 2/20 | 0.47 |
| ▸ | RAB9A | P51151 | 2/20 | 0.47 |
| ▸ | TSHR | P16473 | 1/20 | 0.47 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.47 |
| ▸ | ACACB | O00763 | 1/20 | 0.47 |
| ▸ | ACACA | Q13085 | 1/20 | 0.47 |
| ▸ | SRD5A2 | P31213 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31177917 | 1.00 | MEN1 (0.69) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| SCHEMBL1667099 | 0.84 | ALDH1A1 (0.55) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| SCHEMBL9350261 | 0.84 | MEN1 (0.50) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| SCHEMBL7918712 | 0.84 | ALDH1A1 (0.68) | MEN1KMT2AALDH1A1CYP2C19HSD17B10 | |
| SCHEMBL28909397 | 0.83 | MEN1 (0.58) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| SCHEMBL11484901 | 0.83 | BCL2L1 (0.56) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| Anthracene-9-Carboxylic Acid SCHEMBL29352186 | 0.82 | MEN1 (1.00) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| Anthracene-9-Carboxylic Acid SCHEMBL122832 | 0.82 | MEN1 (1.00) | MEN1KMT2AALDH1A1HPGDKDM4E | |
| Benzophenone SCHEMBL2577611 | 0.81 | ALDH1A1 (0.74) | MEN1KMT2AALDH1A1HPGDATM | |
| SCHEMBL28909399 | 0.81 | KDM4E (0.61) | MEN1KMT2AALDH1A1HPGDKDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 210 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-4383089-A | Process for the production of polyepoxy silicate resin | BLOUNT DAVID H | 1983-05-10 | — | — | US | disclosed |
| US-4383049-A | POLYURETHANES | BLOUNT DAVID H | 1983-05-10 | — | — | US | disclosed |
| US-4377646-A | REACTING AN EPOXY COMPOUND, SILICIC ACID, AND A POLYISOCYANATE USING A LEWIS ACID CATALYST; POLYURETHANES; INSULATION | BLOUNT DAVID H | 1983-03-22 | — | — | US | disclosed |
| US-4376173-A | LIGNIN, CELLULOSE, POLYURETHANE FOAM, POLYISOCYANATE | BLOUNT DAVID H | 1983-03-08 | — | — | US | disclosed |
| US-4367326-A | Process for the production of polyepoxy silicate resins | DORSEY & WHITNEY LLP | 1983-01-04 | — | — | US | disclosed |
| US-4367273-A | Electrophotographic plate comprising a conductive substrate and a photosensitive layer containing an organic photoconductor layer composed of a hydrazone compound | MITSUBISHI CHEMICAL INDUSTRIES LIMITED (JP) | 1983-01-04 | — | — | US | disclosed |
| US-4357463-A | HEATING A SILICON COMPOUND, AN EPOXIDE, A DICARBOXYLIC ACID OR ANHYDRIDE, AND A LEWIS ACID; COATINGS; MOLDING MATERIALS; ADHESIVES | BLOUNT DAVID H | 1982-11-02 | — | — | US | disclosed |
| EP-0063387-A1 | Electrophotographic plate | MITSUBISHI KASEI CORPORATION (JP) | 1982-10-27 | — | — | EP | disclosed |
| US-4278747-A | Electrophotographic plate comprising a conductive substrate and a photosensitive layer containing an organic photoconductor layer composed of a hydrazone compound | MITSUBISHI CHEMICAL INDUSTRIES LIMITED (JP) | 1981-07-14 | — | — | US | disclosed |
| US-3975196-A | Photoconductive charge transfer complex for electrophotography | PITNEY-BOWES, INC. (US) | 1976-08-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | MEN1 847/4885KMT2A 71/4885ALDH1A1 1963/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | MEN1 455/4885KMT2A 1432/4885ALDH1A1 2183/4885 |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | RER1, POLR1A, FEM1B | MEN1 742/4885KMT2A 737/4885ALDH1A1 1044/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.