Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL29267869 | 0.93 | CHRNB2 (0.57) | — | |
| Tetramethylammonium Ion SCHEMBL2139534 | 0.93 | — | — | |
| Tetramethylammonium Ion SCHEMBL28206258 | 0.93 | CHRNB2 (0.57) | — | |
| Tetramethylammonium Ion SCHEMBL1520826 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL22436611 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL9114012 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL4108131 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL15477 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL3199241 | 0.83 | CHRNB2 (0.67) | — | |
| Tetramethylammonium Ion SCHEMBL7166906 | 0.83 | CHRNB2 (0.67) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114656736-A | Oil-resistant easy-to-process fluorine-containing elastomer composition | 江苏千富之丰科技有限公司 | 2022-06-24 | — | — | CN | claimed |
| CN-109859955-B | Preparation method of ruthenium dioxide/carbon composite electrode material | 昆明理工大学 | 2021-02-09 | — | — | CN | claimed |
| CN-109153690-A | Silsesquioxane resins and silicyl acid anhydride composition | 美国陶氏有机硅公司 | 2019-01-04 | — | — | CN | claimed |
| CN-109071576-A | Silsesquioxane resin and an oxaamine composition | 美国陶氏有机硅公司 | 2018-12-21 | — | — | CN | claimed |
| CN-106715399-A | Diazirine compounds as photocrosslinkers and photoimageable compositions comprising them | 普罗米鲁斯有限责任公司 | 2017-05-24 | — | — | CN | claimed |
| CN-115248535-A | Method for defining multiple photoresist patterns | 南亚科技股份有限公司 | 2022-10-28 | — | — | CN | disclosed |
| CN-114656736-A | Oil-resistant easy-to-process fluorine-containing elastomer composition | 江苏千富之丰科技有限公司 | 2022-06-24 | — | — | CN | disclosed |
| CN-109859955-B | Preparation method of ruthenium dioxide/carbon composite electrode material | 昆明理工大学 | 2021-02-09 | — | — | CN | disclosed |
| CN-109859955-B | Preparation method of ruthenium dioxide/carbon composite electrode material | 昆明理工大学 | 2021-02-09 | — | — | CN | disclosed |
| CN-111171192-A | Fluorine-containing water-soluble high polymer material for producing top anti-reflection film in photoetching process | 甘肃华隆芯材料科技有限公司 | 2020-05-19 | — | — | CN | disclosed |
| CN-103376659-B | Photosensitive polymer combination | 住友化学株式会社 | 2019-05-17 | — | — | CN | disclosed |
| CN-109153690-A | Silsesquioxane resins and silicyl acid anhydride composition | 美国陶氏有机硅公司 | 2019-01-04 | — | — | CN | disclosed |
| US-20050194565-A1 | Polishing compound, its production process and polishing method | ASAHI GLASS COMPANY LIMITED (JP) | 2005-09-08 | — | — | US | disclosed |
| EP-1544901-A1 | POLISHING COMPOUND COMPOSITION, METHOD FOR PRODUCING SAME AND POLISHING METHOD | Seimi Chemical Co., Ltd. (JP) | 2005-06-22 | — | — | EP | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |
| EP-0888188-B1 | CRYSTALLINE METALLOPHOSPHATES | NORSK HYDRO AS (NO) | 2002-07-24 | — | — | EP | disclosed |
| US-6274286-B1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-14 | — | — | US | disclosed |
| US-6001328-A | Crystalline metallophosphates | NORSK HYDRO ASA (NR) | 1999-12-14 | — | — | US | disclosed |
| EP-0888188-A1 | CRYSTALLINE METALLOPHOSPHATES | NORSK HYDRO ASA (NO) | 1999-01-07 | — | — | EP | disclosed |
| WO-1997033693-A1 | CRYSTALLINE METALLOPHOSPHATES | NORSK HYDRO ASA (NO) | 1997-09-18 | — | — | WO | disclosed |