Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | TP53 | P04637 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.32 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.31 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12357847 | 0.87 | NR1H2 (0.41) | — | |
| SCHEMBL10165223 | 0.87 | HSD11B1 (0.33) | — | |
| SCHEMBL2789906 | 0.80 | GABRA1 (0.46) | ALDH1A1TP53TDP1GABRA1GABRB2 | |
| SCHEMBL548187 | 0.79 | GABRA1 (0.45) | ALDH1A1TDP1GABRA1GABRB2 | |
| SCHEMBL16943649 | 0.79 | TP53 (0.50) | ALDH1A1TP53TDP1TRPA1HDAC8 | |
| SCHEMBL12635205 | 0.79 | HSD11B1 (0.35) | — | |
| SCHEMBL452090 | 0.76 | ALDH1A1 (0.52) | ALDH1A1TP53TDP1TRPA1HDAC8 | |
| SCHEMBL23220761 | 0.76 | HMGCR (0.33) | — | |
| SCHEMBL24859839 | 0.76 | — | — | |
| SCHEMBL16850002 | 0.74 | NR1H2 (0.41) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| CN-110526802-B | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming method | 信越化学工业株式会社 | 2022-09-20 | — | — | CN | disclosed |
| US-20220260909-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-08-18 | — | — | US | disclosed |
| US-11231650-B2 | Chemically amplified negative resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-25 | — | — | US | disclosed |
| EP-3572876-B1 | MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2021-04-14 | — | — | EP | disclosed |
| EP-3572876-B1 | MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2021-04-14 | — | — | EP | disclosed |
| EP-3579050-B1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-11-11 | — | — | EP | disclosed |
| EP-3572876-A1 | MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2019-11-27 | — | — | EP | disclosed |
| EP-3572876-A1 | MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2019-11-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | PARG, PCNA, PLK2 | ALDH1A1 3351/4885TP53 3997/4885TDP1 2907/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.