SCHEMBL216101

SCHEMBL216101

C=CC(=O)OCc1cccc2cc3ccccc3cc12

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.44
MEN1 O00255 3/20 0.42
KMT2A Q03164 3/20 0.42
MTNR1A P48039 3/20 0.41
KDM4E B2RXH2 2/20 0.41
ALDH1A1 P00352 2/20 0.41
GAA P10253 1/20 0.41
TGM2 P21980 2/20 0.39
PPARG P37231 1/20 0.39
F13A1 P00488 1/20 0.39
TGM1 P22735 1/20 0.39
PARP10 Q53GL7 2/20 0.39
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
EPHX1 P07099 1/20 0.39
PARP15 Q460N3 1/20 0.38
NQO2 P16083 1/20 0.38
EGFR P00533 1/20 0.37
TP53 P04637 1/20 0.37
CYP3A4 P08684 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29484778 0.86 MEN1 (0.51) THRBMEN1KMT2AMTNR1AKDM4E
SCHEMBL2167443 0.86 MEN1 (0.51) THRBMEN1KMT2AMTNR1AKDM4E
SCHEMBL29503759 0.86 THRB (0.52) THRBMTNR1AKDM4EALDH1A1GAA
SCHEMBL20615267 0.84 THRB (0.51) THRBMEN1KMT2AKDM4EALDH1A1
SCHEMBL1844660 0.83 MTNR1A (0.42) MEN1KMT2AMTNR1AKDM4EALDH1A1
SCHEMBL1844658 0.83 MTNR1A (0.42) MEN1KMT2AMTNR1AKDM4EALDH1A1
SCHEMBL27421526 0.82 THRB (0.45) THRBMEN1KMT2AALDH1A1TGM2
SCHEMBL29503672 0.82 THRB (0.49) THRBMTNR1AALDH1A1TP53CYP3A4
SCHEMBL28989666 0.81 THRB (0.48) THRBMTNR1AALDH1A1TP53CYP3A4
SCHEMBL22195191 0.81 F2 (0.43) THRBMEN1KMT2AALDH1A1TGM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 237 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250361419-A1 COMPOSITION FOR FORMING COATING FILM FOR REMOVING FOREIGN MATTERS AND SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-20250110402-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE NISSAN CHEMICAL CORPORATION (JP) 2025-04-03 US disclosed
EP-1757985-A1 ANTIREFLECTIVE FILM CONTAINING SULFUR ATOM Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed
EP-1757987-A1 ANTIREFLECTIVE FILM-FORMING COMPOSITION CONTAINING VINYL ETHER COMPOUND Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed
US-20070020559-A1 Positive-type photosensitive resin composition and cured film manufactured therefrom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-01-25 US disclosed
US-20060234156-A1 Composition for formation of underlayer film for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-10-19 US disclosed
US-20060211256-A1 Porous underlayer film and underlayer film forming composition used for forming the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-09-21 US disclosed
US-20060210915-A1 Composition for forming lower layer film for lithography comprising compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-09-21 US disclosed
EP-1703328-A1 COMPOSITION FOR FORMING NITRIDE COATING FILM FOR HARD MASK Nissan Chemical Industries, Ltd. (JP) 2006-09-20 EP disclosed
EP-1662769-A1 COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP Nissan Chemical Industries, Ltd. (JP) 2006-05-31 EP disclosed
EP-1619555-A1 POROUS UNDERLAYER FILM AND UNDERLAYER FILM FORMING COMPOSITION USED FOR FORMING THE SAME Nissan Chemical Industries, Ltd. (JP) 2006-01-25 EP disclosed
EP-1617289-A1 COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND Nissan Chemical Industries, Ltd. (JP) 2006-01-18 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 THRB 4180/4885MEN1 2480/4885KMT2A 111/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L THRB 1775/4885MEN1 1625/4885KMT2A 1145/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.