SCHEMBL21701054

SCHEMBL21701054

CCC(C)(C)C(=O)Oc1c(I)cc(I)cc1I

nearest known ligand 0.34

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ TTR P02766 1/20 0.34
▸ ELANE P08246 1/20 0.34
▸ POLB P06746 1/20 0.33
▸ NLRP3 Q96P20 1/20 0.33
▸ BPTF Q12830 1/20 0.32
▸ RIPK1 Q13546 2/20 0.31
▸ ITGB3 P05106 1/20 0.30
▸ ITGAV P06756 1/20 0.30
▸ THRA P10827 1/20 0.30
▸ THRB P10828 1/20 0.30
▸ RXRA P19793 1/20 0.30
▸ PPARG P37231 1/20 0.30
▸ TPMT P51580 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21757461 0.88 CNR2 (0.33) ELANEBPTFRIPK1
SCHEMBL26759127 0.88 POLB (0.37) ELANEPOLBNLRP3TPMT
SCHEMBL25968669 0.85 RIPK1 (0.33) ELANERIPK1
SCHEMBL26853252 0.79 TPMT (0.41) TTRELANEPOLBBPTFITGB3
SCHEMBL25468115 0.79 KDM4E (0.30) ELANE
SCHEMBL26453057 0.76 ELANE (0.41) ELANERIPK1ITGB3ITGAVTHRA
SCHEMBL13296190 0.75 LMNA (0.32) POLB
SCHEMBL25916181 0.74 ELANE (0.53) ELANE
SCHEMBL17068814 0.74 KDM4E (0.38) ELANENLRP3RIPK1
SCHEMBL17552762 0.74 RIPK1 (0.46) ELANERIPK1THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240241444-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-07-18 — — US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 — — US disclosed
US-20240219831-A1 PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-07-04 — — US disclosed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 — — US disclosed
US-20230400769-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-12-14 — — US disclosed
US-20230384674-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-30 — — US disclosed
EP-4282887-A1 PATTERN FORMATION METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2023-11-29 — — EP disclosed
US-20230367212-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 — — US disclosed
WO-2023162762-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 — — WO disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 — — US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 — — US disclosed
US-20230221640-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-13 — — US disclosed
US-20230139891-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2023-05-04 — — US disclosed
US-20230139009-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 — — US disclosed
US-20230132693-A1 RINSING LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2023-05-04 — — US disclosed
US-20210011377-A1 PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-01-14 — — US disclosed
US-20200050106-A1 PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2020-02-13 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 TTR 4233/4885ELANE 813/4885POLB 484/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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