Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 1/20 | 0.49 |
| ▸ | KMT2A | Q03164 | 6/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.46 |
| ▸ | MEN1 | O00255 | 4/20 | 0.46 |
| ▸ | MAPT | P10636 | 3/20 | 0.46 |
| ▸ | LMNA | P02545 | 2/20 | 0.46 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.46 |
| ▸ | NPC1 | O15118 | 2/20 | 0.46 |
| ▸ | RAB9A | P51151 | 2/20 | 0.46 |
| ▸ | MITF | O75030 | 1/20 | 0.46 |
| ▸ | HTT | P42858 | 1/20 | 0.46 |
| ▸ | CCR6 | P51684 | 1/20 | 0.46 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.46 |
| ▸ | VCAM1 | P19320 | 1/20 | 0.43 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.43 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.43 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.43 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.43 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27966350 | 0.83 | MAPT (0.48) | POLBKMT2AALDH1A1MEN1MAPT | |
| SCHEMBL28212566 | 0.82 | VCAM1 (0.55) | POLBKMT2AALDH1A1MEN1MAPT | |
| SCHEMBL6513510 | 0.81 | CA1 (0.41) | POLBKMT2AALDH1A1MEN1MAPT | |
| SCHEMBL28845039 | 0.81 | KMT2A (0.49) | POLBKMT2AALDH1A1MEN1NPC1 | |
| SCHEMBL2431717 | 0.80 | ALDH1A1 (0.45) | POLBKMT2AALDH1A1MEN1MAPT | |
| SCHEMBL7790404 | 0.80 | ALDH1A1 (0.48) | KMT2AALDH1A1MEN1MAPTLMNA | |
| SCHEMBL9508889 | 0.78 | ALPL (0.46) | POLBKMT2AALDH1A1MEN1MAPT | |
| SCHEMBL27724423 | 0.78 | HTT (0.55) | KMT2AALDH1A1MEN1MAPTLMNA | |
| Dinitrophenylene SCHEMBL27775687 | 0.77 | CYP1A2 (0.55) | KMT2AALDH1A1LMNAHTTCYP1A2 | |
| SCHEMBL1732920 | 0.77 | CYP19A1 (0.52) | POLBKMT2AALDH1A1MEN1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2387735-B1 | NONPOLYMERIC BINDERS FOR SEMICONDUCTOR SUBSTRATE COATINGS | FUJIFILM ELECTRONIC MAT USA INC (US) | 2019-03-13 | — | — | EP | disclosed |
| US-8535872-B2 | Thermally cured underlayer for lithographic application | FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) | 2013-09-17 | — | — | US | disclosed |
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| EP-1813985-B1 | Antireflection film composition, substrate, and pattering process | SHINETSU CHEMICAL CO (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20120178871-A1 | THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION | DE BINOD B (US) | 2012-07-12 | — | — | US | disclosed |
| US-8153346-B2 | Hydroxyl containing polymer, amino crosslinking agent and thermal acid generator; undercoating for multilayer lithography material | FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) | 2012-04-10 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| EP-2387735-A1 | NONPOLYMERIC BINDERS FOR SEMICONDUCTOR SUBSTRATE COATINGS | FujiFilm Electronic Materials USA, Inc. (US) | 2011-11-23 | — | — | EP | disclosed |
| US-8037621-B2 | Article of footwear including a woven strap system | NIKE, INC. (US) | 2011-10-18 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| EP-1788436-A1 | Rework process for photoresist film | Shin-Etsu Chemical Company, Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| EP-1788437-A2 | Rework process for photoresist film | Shinetsu Chemical Co., Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |