SCHEMBL217607

SCHEMBL217607

COc1cc(C2(c3ccc(O)c(OC)c3)c3ccccc3-c3ccccc32)ccc1O

nearest known ligand 0.64

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.64
ESR2 Q92731 1/20 0.64
KMT2A Q03164 6/20 0.47
MEN1 O00255 5/20 0.47
MAPT P10636 4/20 0.47
KDM4E B2RXH2 3/20 0.47
LMNA P02545 1/20 0.47
OPRK1 P41145 1/20 0.47
SMN1; SMN2 Q16637 1/20 0.47
GAA P10253 3/20 0.47
L3MBTL1 Q9Y468 3/20 0.47
HPGD P15428 3/20 0.46
MAOB P27338 1/20 0.46
ALDH1A1 P00352 4/20 0.44
CA1 P00915 1/20 0.44
CA2 P00918 1/20 0.44
TP53 P04637 1/20 0.44
TSHR P16473 1/20 0.44
PDK2 Q15119 1/20 0.43
POLB P06746 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29967843 1.00 ESR1 (0.64) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL28529209 0.94 ESR1 (0.57) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL16674125 0.85 ESR1 (0.51) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL22829513 0.84 ESR1 (0.51) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL29616925 0.84 ESR1 (0.51) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL29462974 0.84 ESR1 (0.78) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL1847909 0.84 ESR1 (0.78) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL2688233 0.83 ESR1 (0.59) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL4658915 0.81 MEN1 (0.51) ESR1ESR2KMT2AMEN1MAPT
SCHEMBL30232706 0.81 MEN1 (0.51) ESR1ESR2KMT2AMEN1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 311 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7303855-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US claimed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US claimed
EP-4184248-B1 COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND AND POLYMER FOR FORMING ORGANIC FILM SHINETSU CHEMICAL CO (JP) 2026-04-15 EP disclosed
US-12590173-B2 Composition, pattern forming method, semiconductor device, and method for manufacturing semiconductor device KIOXIA CORPORATION (JP) 2026-03-31 US disclosed
US-12584023-B2 Composition for forming organic film, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
EP-4398037-B1 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2026-01-21 EP disclosed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
EP-4239408-B1 COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND SHINETSU CHEMICAL CO (JP) 2025-12-10 EP disclosed
US-12443104-B2 Composition for forming organic film, patterning process, and compound and polymer for forming organic film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-14 US disclosed
US-12441712-B2 Material for forming organic film, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-14 US disclosed
EP-3842469-B1 MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND SHINETSU CHEMICAL CO (JP) 2025-08-27 EP disclosed
EP-1223184-A1 Polycarbonate resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2002-07-17 EP disclosed
US-20020051942-A1 Photo-or heat-curable resin composition and multilayer printed wiring board NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD. (JP) 2002-05-02 US disclosed
US-6340737-B2 COPOLYCARBONATE OF A 9,9-BIS(HYDROXYPHENYL)FLUORENE COMPOUND, A POLYSILOXANE ENDCAPPED WITH A HYDROXYPHENYL GROUP, AND A PHENOLIC DIOL SUCH AS BISPHENOL A; REDUCED OBLIQUE INCIDENCE BIREFRINGENCE, MOLDABILITY, GOOD TRANSPARENCY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2002-01-22 US disclosed
US-20010039313-A1 Polycarbonate resin and optical article used the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2001-11-08 US disclosed
EP-1138714-A2 Polycarbonate resin and optical article used the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2001-10-04 EP disclosed
EP-0646845-B1 COLOR FILTER, MATERIAL THEREOF AND RESIN NIPPON STEEL CORP (JP) 2001-03-14 EP disclosed
US-5721076-A A PHOTO OR THERMAL CURABLE, ALKALI-DEVELOPABLE PHOTOSENSITIVE POLYESTER MONOMERS CONTAINING ACRYLATED BISPHENOL EPOXY COMPOUNDS AND MONOANHYDIDE OR DIANHYDRIDE COMPOUNDS; NIPPON STEEL CORPORATION (JP) 1998-02-24 US disclosed
US-5710234-A POLYORTHOESTERS FOR MOLDING MATERIALS, ADHESIVES AND HEAT RESISTANT POLYMERS NIPPON STEEL CHEMICAL CO., LTD. (JP) 1998-01-20 US disclosed
EP-0646845-A1 COLOR FILTER, MATERIAL THEREOF AND RESIN Nippon Steel Corporation (JP) 1995-04-05 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12443104-B2 Composition for forming organic film, patterning process, and compound and polymer for forming organic film OR10J3, ICAM1, PYM1 ESR1 2668/4885ESR2 3814/4885KMT2A 1223/4885
US-12584023-B2 Composition for forming organic film, patterning process, and compound F12, MLX, F11 ESR1 1891/4885ESR2 2260/4885KMT2A 3399/4885
US-12441712-B2 Material for forming organic film, patterning process, and compound OR10J3, CDH1, EPCAM ESR1 1396/4885ESR2 3011/4885KMT2A 1094/4885
US-12590173-B2 Composition, pattern forming method, semiconductor device, and method for manufacturing semiconductor device TET2, SDC2, TST ESR1 1651/4885ESR2 2468/4885KMT2A 1337/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.