Water

Water

SCHEMBL21774013

O.[SnH2].[Zn].[Zr]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL1423428 0.87
Water SCHEMBL23753717 0.87
Water SCHEMBL16563521 0.87
Water SCHEMBL3905081 0.87
Water SCHEMBL7169822 0.87
Water SCHEMBL20474371 0.75
Water SCHEMBL8948368 0.75
Water SCHEMBL21057297 0.75
Water SCHEMBL20557680 0.75
Water SCHEMBL19180844 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 831 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260143674-A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-21 US claimed
EP-4730944-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-04-22 EP claimed
US-20260107441-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-16 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-12593474-B2 Semiconductor device including channel structure comprising different compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-31 US claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-20260025968-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20260025973-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20250351338-A1 SEMICONDUCTOR DEVICES SAMSUNG ELECTRONICS CO LTD (KR) 2025-11-13 US claimed
US-20250342865-A1 MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY INC (US) 2025-11-06 US claimed
WO-2021041563-A1 MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD STRUCTURES MICRON TECHNOLOGY, INC. (US) 2021-03-04 WO claimed
WO-2021041547-A1 MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLATE MICRON TECHNOLOGY, INC. (US) 2021-03-04 WO claimed
US-10892264-B2 Memory device having 2-transistor vertical memory cell MICRON TECHNOLOGY, INC. (US) 2021-01-12 US claimed
US-20200212050-A1 MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200211602-A1 MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200211615-A1 MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200212051-A1 MEMORY DEVICE HAVING SHARED ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200212045-A1 VERTICAL 2-TRANSISTOR MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200111919-A1 DEVICES INCLUDING VERTICAL TRANSISTORS, AND RELATED METHODS AND ELECTRONIC SYSTEMS MICRON TECHNOLOGY, INC. 2020-04-09 US claimed
US-20200111917-A1 DEVICES AND ELECTRONIC SYSTEMS INCLUDING VERTICAL TRANSISTORS, AND RELATED METHODS MICRON TECHNOLOGY, INC. 2020-04-09 US claimed