SCHEMBL21795337

SCHEMBL21795337

O=S(=O)(c1ccc(C2C(c3ccccc3)C2c2ccccc2)cc1)C1CCCCC1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MMP8 P22894 2/20 0.44
MMP13 P45452 2/20 0.44
MMP1 P03956 1/20 0.44
HTR2A P28223 3/20 0.43
MAPT P10636 1/20 0.42
KCNH2 Q12809 2/20 0.41
HTR2C P28335 1/20 0.41
DRD2 P14416 1/20 0.40
ESR1 P03372 1/20 0.40
KDM4E B2RXH2 2/20 0.39
MEN1 O00255 1/20 0.39
ALDH1A1 P00352 1/20 0.39
KMT2A Q03164 1/20 0.39
NAMPT P43490 1/20 0.39
PSEN1 P49768 1/20 0.38
PSEN2 P49810 1/20 0.38
APH1B Q8WW43 1/20 0.38
NCSTN Q92542 1/20 0.38
APH1A Q96BI3 1/20 0.38
PSENEN Q9NZ42 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL776895 0.85 MAPT (0.55) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL777971 0.83 MAPT (0.56) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL25432674 0.82 ALDH1A1 (0.47) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL21615770 0.79 HTR2A (0.46) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL7541817 0.79 HTR2A (0.56) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL20379865 0.78 TSHR (0.46) MMP8MMP13MMP1MEN1ALDH1A1
SCHEMBL21615541 0.78 MMP8 (0.43) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL25503448 0.78 MMP8 (0.43) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL702657 0.78 MMP8 (0.69) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL794908 0.78 MMP8 (0.43) MMP8MMP13MMP1HTR2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4023635-A1 ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2022-07-06 EP disclosed
EP-3731016-A1 ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE Fujifilm Corporation (JP) 2020-10-28 EP disclosed
WO-2020044771-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURE METHOD 富士フイルム株式会社 2020-03-05 WO disclosed