SCHEMBL702657

SCHEMBL702657

O=S(=O)(c1ccc(Sc2ccccc2)cc1)C1CCCCC1

nearest known ligand 0.69

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
MMP8 P22894 6/20 0.69
MMP13 P45452 5/20 0.69
MMP1 P03956 2/20 0.43
MMP3 P08254 2/20 0.43
HTR2A P28223 3/20 0.42
MAPT P10636 1/20 0.41
KCNH2 Q12809 2/20 0.40
HTR2C P28335 1/20 0.40
ALDH1A1 P00352 3/20 0.39
LMNA P02545 1/20 0.39
HPGD P15428 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
KDM4E B2RXH2 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
NAMPT P43490 1/20 0.38
PIK3C3 Q8NEB9 1/20 0.37
DDIT3 P35638 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL776895 0.84 MAPT (0.55) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL10797750 0.82 MMP8 (0.60) MMP8MMP13MMP1MMP3KMT2A
SCHEMBL7212033 0.82 MMP13 (0.71) MMP8MMP13MMP1MMP3HTR2A
SCHEMBL7212111 0.82 MMP13 (1.00) MMP8MMP13MMP1MMP3HTR2A
SCHEMBL777971 0.82 MAPT (0.56) MMP8MMP13MMP1HTR2AMAPT
Hydrochloric Acid SCHEMBL10798125 0.81 MMP8 (0.59) MMP8MMP13MMP1MMP3KMT2A
SCHEMBL25432674 0.81 ALDH1A1 (0.47) MMP8MMP13MMP1MMP3HTR2A
Diphenylsulfane SCHEMBL4999406 0.78 MMP8 (0.46) MMP8MMP13MMP1MEN1KMT2A
SCHEMBL21795337 0.78 MMP8 (0.44) MMP8MMP13MMP1HTR2AMAPT
SCHEMBL21615770 0.78 HTR2A (0.46) MMP8MMP13MMP1HTR2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10423083-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2019-09-24 US disclosed
EP-3205640-B1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2019-05-22 EP disclosed
EP-2325695-B1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2017-12-20 EP disclosed
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
EP-3205640-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2017-08-16 EP disclosed
US-20170176878-A1 CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE JSR CORPORATION (JP) 2017-06-22 US disclosed
US-9459532-B2 Radiation-sensitive resin composition, polymer and compound JSR CORPORATION (JP) 2016-10-04 US disclosed
US-9259668-B2 Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate JSR CORPORATION (JP) 2016-02-16 US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed
US-20140363773-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-12-11 US disclosed
US-20100323292-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR CORPORATION (JP) 2010-12-23 US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100248167-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2010-09-30 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100203452-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-08-12 US disclosed
US-20100190104-A1 METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD JSR CORPORATION (JP) 2010-07-29 US disclosed
US-20090305161-A1 LIQUID IMMERSION LITHOGRAPHY JSR CORPORATION (JP) 2009-12-10 US disclosed
EP-2128706-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR Corporation (JP) 2009-12-02 EP disclosed
EP-1953595-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed