SCHEMBL2189989

SCHEMBL2189989

C=C(C)C(=O)OC(C(F)(F)F)C(F)(F)S(=O)(=O)[O-].c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.32
MGLL Q99685 5/20 0.32
ABHD6 Q9BV23 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6117211 0.94 RORC (0.31) MGLL
SCHEMBL2283826 0.94 ESR2 (0.32)
SCHEMBL2290991 0.92 ELANE (0.43) ELANE
SCHEMBL6117936 0.90 ELANE (0.33) ELANEMGLLABHD6
SCHEMBL2286119 0.88 HTT (0.40)
SCHEMBL1321014 0.88 MAPT (0.30)
SCHEMBL482783 0.87 ALDH1A1 (0.33) MGLLABHD6
SCHEMBL1319180 0.85 ELANE (0.46) ELANE
SCHEMBL1318494 0.84 TDP1 (0.34)
SCHEMBL1672501 0.84 ELANE (0.45) ELANE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12164227-B2 Chemically amplified negative resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-10 US disclosed
EP-4459376-A2 ALCOHOL COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2024-11-06 EP disclosed
EP-4258056-A2 ALCOHOL COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-11 EP disclosed
US-11773059-B2 Onium salt, chemically amplified negative resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
EP-4047417-B1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-08-16 EP disclosed
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-29 US disclosed
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-10 US disclosed
EP-4089481-A2 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND Shin-Etsu Chemical Co., Ltd. (JP) 2022-11-16 EP disclosed
US-11500285-B2 Multifunctional polymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2022-11-15 US disclosed
US-20110200919-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-18 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20100304302-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
EP-2256551-A1 Chemically amplified resist compositon and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227273-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
EP-2112554-A2 Sulfonium salt-containing polymer, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-10-28 EP disclosed
US-7569326-B2 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SLC6A9, SLC6A5, REN ELANE 2239/4885MGLL 948/4885ABHD6 630/4885
US-11548844-B2 Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process PARG, PCNA, PLK2 ELANE 3015/4885MGLL 2760/4885ABHD6 2780/4885
US-11773059-B2 Onium salt, chemically amplified negative resist composition, and pattern forming process LBR, IDUA, ADORA1 ELANE 2086/4885MGLL 3424/4885ABHD6 2165/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.