SCHEMBL2190883

SCHEMBL2190883

Cc1cc(C2(c3cc(C)c(O)c(CO)c3)CCC(C(C)(C)C3CCC(c4cc(C)c(O)c(CO)c4)(c4cc(C)c(O)c(CO)c4)CC3)CC2)cc(CO)c1O

nearest known ligand 0.44

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ACHE P22303 1/20 0.44
SHBG P04278 1/20 0.41
CYP1A2 P05177 1/20 0.34
CYP2D6 P10635 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
ESR1 P03372 2/20 0.33
ESR2 Q92731 2/20 0.33
MAOA P21397 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14616322 0.91 ACHE (0.34) ACHESHBG
SCHEMBL18220627 0.91 ACHE (0.37) ACHESHBGCYP1A2CYP2D6CYP2C9
SCHEMBL13559928 0.91 ACHE (0.37) ACHESHBG
SCHEMBL13559716 0.89 ACHE (0.36) ACHESHBGESR1ESR2
SCHEMBL2193666 0.87 ACHE (0.40) ACHESHBGCYP1A2CYP2D6CYP2C9
SCHEMBL28308729 0.87 ACHE (0.58) ACHECYP1A2CYP2D6CYP2C9CYP2C19
SCHEMBL18220628 0.86 ACHE (0.42) ACHECYP1A2CYP2D6CYP2C9CYP2C19
SCHEMBL14616328 0.83 FDPS (0.35) CYP2C9
SCHEMBL8346849 0.79 ACHE (0.71) ACHESHBGCYP1A2CYP2D6CYP2C9
SCHEMBL20225253 0.79 ACHE (0.71) ACHESHBGCYP1A2CYP2D6CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9798234-B2 Resin composition, resist film using same, resist-coated mask blank, resist pattern forming method, and photo mask FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9798234-B2 Resin composition, resist film using same, resist-coated mask blank, resist pattern forming method, and photo mask FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9651864-B2 Negative resist composition, method for producing relief pattern using the same, and electronic component using the same DAI NIPPON PRINTING CO., LTD. (JP) 2017-05-16 US disclosed
US-9651864-B2 Negative resist composition, method for producing relief pattern using the same, and electronic component using the same DAI NIPPON PRINTING CO., LTD. (JP) 2017-05-16 US disclosed
US-9522868-B2 Tetrakis(ether-substituted formylphenyl) HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2016-12-20 US disclosed
US-9522868-B2 Tetrakis(ether-substituted formylphenyl) HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2016-12-20 US disclosed
US-9522868-B2 Tetrakis(ether-substituted formylphenyl) HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2016-12-20 US disclosed
US-20160327862-A1 RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD, AND PHOTO MASK FUJIFILM CORPORATION (JP) 2016-11-10 US disclosed
US-20160327862-A1 RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD, AND PHOTO MASK FUJIFILM CORPORATION (JP) 2016-11-10 US disclosed
US-20160016884-A1 NEW TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2016-01-21 US disclosed
US-20130017376-A1 NEGATIVE RESIST COMPOSITION, METHOD FOR PRODUCING RELIEF PATTERN USING THE SAME, AND ELECTRONIC COMPONENT USING THE SAME DAI NIPPON PRINTING CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017376-A1 NEGATIVE RESIST COMPOSITION, METHOD FOR PRODUCING RELIEF PATTERN USING THE SAME, AND ELECTRONIC COMPONENT USING THE SAME DAI NIPPON PRINTING CO., LTD. (JP) 2013-01-17 US disclosed
US-20120277479-A1 NOVEL POLYNUCLEAR POLY(PHENOL) FAMILY HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2012-11-01 US disclosed
US-20120277479-A1 NOVEL POLYNUCLEAR POLY(PHENOL) FAMILY HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2012-11-01 US disclosed
US-8278022-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-02 US disclosed
US-20110172457-A1 TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) AND NEW POLYNUCLEAR POLYPHENOL DERIVED FROM THE SAME HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2011-07-14 US disclosed
US-20110172457-A1 TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) AND NEW POLYNUCLEAR POLYPHENOL DERIVED FROM THE SAME HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2011-07-14 US disclosed
US-20110172457-A1 TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) AND NEW POLYNUCLEAR POLYPHENOL DERIVED FROM THE SAME HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2011-07-14 US disclosed
US-20090317745-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-12-24 US disclosed
WO-2009154291-A1 NOVEL TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) AND NOVEL POLYNUCLEAR POLY(PHENOL) DERIVED FROM THE SAME 本州化学工業株式会社 (JP) 2009-12-23 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160016884-A1 NEW TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) AHR, PAH, ALK ACHE 4873/4885SHBG 2278/4885CYP1A2 68/4885
US-20120277479-A1 NOVEL POLYNUCLEAR POLY(PHENOL) FAMILY PAH, C1S, AP1S1 ACHE 3989/4885SHBG 2056/4885CYP1A2 702/4885
US-20110172457-A1 TETRAKIS(ETHER-SUBSTITUTED FORMYLPHENYL) AND NEW POLYNUCLEAR POLYPHENOL DERIVED FROM THE SAME AHR, PAH, ARNT ACHE 4301/4885SHBG 1452/4885CYP1A2 353/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.