Known targets — ChEMBL curated mechanism
ADRB1ADRB2ATP4AATP4BAXLCHRM2CHRM3DRD2FLT3HRH1HTR2AHTR2BHTR2CKCNH2KMT2AMAP2K1MAP2K2MEN1MLNRPLK4RENS1PR1SLC6A2SLC6A4atpAatpBatpCatpDatpEatpFatpFHatpGpol
The experimentally established mechanism targets of Fumaric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH1 known ✓ | P35367 | 7/20 | 0.45 |
| ▸ | KMT2A known ✓ | Q03164 | 1/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.41 |
| ▸ | PTGER3 | P43115 | 1/20 | 0.41 |
| ▸ | PTGER2 | P43116 | 1/20 | 0.41 |
| ▸ | PTGDR | Q13258 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.41 |
| ▸ | HCAR2 | Q8TDS4 | 2/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
| ▸ | USP2 | O75604 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.40 |
| ▸ | RECQL | P46063 | 1/20 | 0.40 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Maleic Acid SCHEMBL22188495 | 1.00 | HRH1 (0.45) | HRH1GAAKMT2ATBXA2RPTGER3 | |
| Bicarbonate SCHEMBL22188527 | 0.91 | ALDH1A1 (0.44) | GAAKMT2AALDH1A1LMNAUSP2 | |
| Oxalic Acid SCHEMBL22188492 | 0.89 | ALDH1A1 (0.43) | GAAKMT2AALDH1A1LMNAUSP2 | |
| Acetic Acid SCHEMBL22188515 | 0.89 | ALDH1A1 (0.43) | GAAKMT2AALDH1A1LMNAUSP2 | |
| Formic Acid SCHEMBL22188489 | 0.88 | CNR2 (0.40) | GAAKMT2AALDH1A1LMNAUSP2 | |
| SCHEMBL4650255 | 0.87 | HTR2A (0.42) | — | |
| Malonic Acid SCHEMBL22188501 | 0.86 | ALDH1A1 (0.42) | GAAKMT2AALDH1A1LMNAUSP2 | |
| Propionic Acid SCHEMBL22188534 | 0.86 | ALDH1A1 (0.41) | GAAKMT2AALDH1A1LMNAUSP2 | |
| Hydrochloric Acid SCHEMBL1559085 | 0.85 | HTR2A (0.41) | HPGD | |
| Iodide SCHEMBL22188505 | 0.85 | HTR2A (0.41) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-20240319598-A1 | Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-26 | — | — | US | disclosed |
| EP-4435515-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-25 | — | — | EP | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-4250008-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-27 | — | — | EP | disclosed |
| EP-4020081-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | SHINETSU CHEMICAL CO (JP) | 2023-05-17 | — | — | EP | disclosed |
| CN-111855581-B | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2023-04-14 | — | — | CN | disclosed |
| US-11592287-B2 | Method for measuring distance of diffusion of curing catalyst | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-02-28 | — | — | US | disclosed |
| CN-111855581-A | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| CN-111856882-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| US-20200341377-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-29 | — | — | US | disclosed |
| US-20200340806-A1 | METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-29 | — | — | US | disclosed |
| EP-3731017-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-10-28 | — | — | EP | disclosed |
| CN-111458980-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-07-28 | — | — | CN | disclosed |
| CN-111423587-A | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2020-07-17 | — | — | CN | disclosed |
| EP-3680275-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-07-15 | — | — | EP | disclosed |
| US-20200216670-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-09 | — | — | US | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | HRH1 3322/4885KMT2A 642/4885GAA 1927/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | HRH1 2068/4885KMT2A 2548/4885GAA 4777/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.