SCHEMBL223717

SCHEMBL223717

[CH2]Cc1ccccc1Sc1ccccc1

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRNA7 P36544 2/20 0.53
CYP2C9 P11712 2/20 0.46
CYP2C19 P33261 2/20 0.46
HPGD P15428 1/20 0.46
SMN1; SMN2 Q16637 3/20 0.45
LMNA P02545 1/20 0.45
SLC6A4 P31645 5/20 0.44
SLC6A2 P23975 4/20 0.44
SLC6A3 Q01959 3/20 0.44
SIRT1 Q96EB6 1/20 0.41
HTR1A P08908 1/20 0.41
HTR3A P46098 1/20 0.41
KDM4E B2RXH2 1/20 0.40
NSD2 O96028 1/20 0.40
MAPT P10636 1/20 0.40
MAPK1 P28482 1/20 0.40
MEN1 O00255 1/20 0.40
POLB P06746 1/20 0.40
KMT2A Q03164 1/20 0.40
CYP2D6 P10635 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1786728 0.78 CHRNA7 (0.53) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL9472324 0.78 APOBEC3G (0.61) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL3484527 0.78 CHRNA7 (0.53) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL5333062 0.78 CHRNA7 (0.53) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL29582043 0.78 CHRNA7 (0.53) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL7197145 0.78 SMN1; SMN2 (0.49) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL15850627 0.77 CHRNA7 (0.51) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL1866871 0.77 CHRNA7 (0.51) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2
SCHEMBL795029 0.75 SIRT1 (0.54) CHRNA7HPGDSMN1; SMN2LMNASIRT1
SCHEMBL4385189 0.75 CYP2C9 (0.51) CHRNA7CYP2C9CYP2C19HPGDSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10928727-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing FUJIFILM CORPORATION (JP) 2021-02-23 US disclosed
US-10423068-B2 Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2019-09-24 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-20170174801-A1 NON-CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION, NON-CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-20150370170-A1 PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-12-24 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-20020102491-A1 Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) FUJI PHOTO FILM CO., LTD. 2002-08-01 US disclosed
EP-1199603-A9 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2002-07-31 EP disclosed
US-20020058200-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-05-16 US disclosed
EP-1199603-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2002-04-24 EP disclosed
US-6376152-B2 MIXTURE OF A COMPOUND WHICH GENERATES AN ACID UPON RADIATION, RESIN AND NITROGEN-CONTAINING COMPOUND FUJI PHOTO FILM CO., LTD. (JP) 2002-04-23 US disclosed
US-20020006578-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-01-17 US disclosed
EP-1158363-A1 Positive resist composition and onium salts of saccharin derivatives FUJI PHOTO FILM CO., LTD. (JP) 2001-11-28 EP disclosed
US-20010041300-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
US-20010021479-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-09-13 US disclosed
US-20010008739-A1 Positive photoresist composition for exposure to far ultraviolet ray FUJIFILM CORPORATION (JP) 2001-07-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020102491-A1 Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) RARA, ARSA, RARB CHRNA7 4411/4885CYP2C9 4681/4885CYP2C19 4723/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.