SCHEMBL22472071

SCHEMBL22472071

CCCCOCO[Si](OC)(OC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.39
ALDH1A1 P00352 3/20 0.37
TSHR P16473 3/20 0.37
HPGD P15428 1/20 0.36
CYP1A2 P05177 2/20 0.34
CYP2C9 P11712 2/20 0.34
CYP2C19 P33261 2/20 0.34
RECQL P46063 1/20 0.34
CYP2D6 P10635 1/20 0.33
CYP19A1 P11511 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
NPSR1 Q6W5P4 1/20 0.32
KDM4E B2RXH2 1/20 0.32
LMNA P02545 1/20 0.32
MAPT P10636 1/20 0.32
HTT P42858 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
FGFR1 P11362 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28307215 0.90 LMNA (0.33) LTA4HALDH1A1HPGDLMNA
SCHEMBL10907580 0.86 LTA4H (0.43) LTA4HALDH1A1TSHRHPGDCYP1A2
SCHEMBL21294151 0.85 NCF1 (0.35) TSHRKDM4ESMN1; SMN2
SCHEMBL28351506 0.83 CA2 (0.35) ALDH1A1TSHRKDM4ELMNASMN1; SMN2
SCHEMBL17391641 0.83 LTA4H (0.43) LTA4HALDH1A1TSHRHPGDCYP1A2
SCHEMBL1969300 0.83
SCHEMBL10710247 0.81 LTA4H (0.43) LTA4HALDH1A1TSHRLMNA
SCHEMBL1971501 0.81 POLB (0.32) ALDH1A1KDM4ESMN1; SMN2
SCHEMBL17391609 0.80 LTA4H (0.42) LTA4HALDH1A1TSHRLMNAMAPT
SCHEMBL19356597 0.80 LTA4H (0.42) LTA4HALDH1A1TSHRLMNAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2020196642-A1 FILM-FORMING COMPOSITION 日産化学株式会社 2020-10-01 WO disclosed
CN-110494807-A The resist lower membrane formation composition containing silicon with carbonyl structure NISSAN CHEMICAL CORP 2019-11-22 CN disclosed
CN-109891321-A Silicon-containing resist underlayer film-forming composition containing dihydroxy-containing organic group 日产化学株式会社 2019-06-14 CN disclosed
CN-107615168-A Radiation-sensitive composition 日产化学工业株式会社 2018-01-19 CN disclosed
CN-107209460-A Photoetching comprising the hydrolysable silanes with carbonic ester skeleton is with resist lower membrane formation composition 日产化学工业株式会社 2017-09-26 CN disclosed
CN-107075302-A The film formation composition of the silicon containing crosslinking reactivity 日产化学工业株式会社 2017-08-18 CN disclosed
CN-107003613-A Photoetching comprising the hydrolysable silanes with halogen-containing carboxylic acyloxy amido is with resist lower membrane formation composition 日产化学工业株式会社 2017-08-01 CN disclosed
CN-106662821-A Composition for forming silicon-containing resist underlayer film having organic group containing aliphatic polycyclic structure 日产化学工业株式会社 2017-05-10 CN disclosed
CN-101624447-B Polysilsesquioxane copolymer, polysilsesquioxane copolymer thin film including the same, organic light emitting diode display device including the same, and associated methods SAMSUNG MOBILE DISPLAY CO LTD 2012-11-21 CN disclosed
CN-101624447-A Polysilsesquioxane copolymer, polysilsesquioxane copolymer thin film including the same, organic light emitting diode display device including the same, and associated methods SAMSUNG MOBILE DISPLAY CO LTD 2010-01-13 CN disclosed