SCHEMBL21294151

SCHEMBL21294151

CCOCCOCO[Si](OC)(OC)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
NCF1 P14598 2/20 0.35
KDM4E B2RXH2 1/20 0.33
RAB9A P51151 2/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
NPC1 O15118 1/20 0.32
USP2 O75604 1/20 0.32
TP53 P04637 1/20 0.32
MEN1 O00255 1/20 0.30
TSHR P16473 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1969300 0.91
SCHEMBL28307215 0.88 LMNA (0.33) MEN1KMT2A
SCHEMBL28351506 0.88 CA2 (0.35) KDM4ERAB9ASMN1; SMN2NPC1MEN1
SCHEMBL22472071 0.85 LTA4H (0.39) KDM4ESMN1; SMN2TSHR
SCHEMBL1971501 0.82 POLB (0.32) KDM4ESMN1; SMN2
SCHEMBL30883010 0.82 LTA4H (0.32) NCF1KDM4ERAB9ASMN1; SMN2NPC1
SCHEMBL11444489 0.80 NCF1 (0.40) NCF1KDM4ERAB9ASMN1; SMN2NPC1
SCHEMBL1225533 0.80 TSHR (0.33) KDM4ERAB9ASMN1; SMN2NPC1TP53
SCHEMBL1967786 0.77 NCF1 (0.38) NCF1KDM4ERAB9ASMN1; SMN2NPC1
SCHEMBL669703 0.77 LMNA (0.36) KDM4ESMN1; SMN2TP53MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111902774-B Composition for forming silicon-containing resist underlayer film comprising nitric acid and protected phenol group 日产化学株式会社 2023-10-31 CN disclosed
US-20230112897-A1 COMPOSITION FOR FORMING PHOTOCURABLE SILICON-CONTAINING COATING FILM NISSAN CHEMICAL CORPORATION (JP) 2023-04-13 US disclosed
CN-111742020-B Composition for forming photocurable silicon-containing coating film 日产化学株式会社 2022-08-16 CN disclosed
US-20210054231-A1 COMPOSITION FOR FORMING PHOTOCURABLE SILICON-CONTAINING COATING FILM NISSAN CHEMICAL CORPORATION (JP) 2021-02-25 US disclosed
US-20210018840-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS PROTECTED PHENOLIC GROUP AND NITRIC ACID NISSAN CHEMICAL CORPORATION (JP) 2021-01-21 US disclosed
CN-111902774-A Composition for forming silicon-containing resist underlayer film containing nitric acid and protected phenol group 日产化学株式会社 2020-11-06 CN disclosed
CN-111742020-A Composition for forming photocurable silicon-containing coating film 日产化学株式会社 2020-10-02 CN disclosed
US-20190265593-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ORGANIC GROUP HAVING DIHYDROXY GROUP NISSAN CHEMICAL CORPORATION (JP) 2019-08-29 US disclosed