Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1892473 | 0.96 | — | — | |
| Hydrochloric Acid SCHEMBL9567674 | 0.92 | — | — | |
| SCHEMBL9709032 | 0.79 | — | — | |
| SCHEMBL1471598 | 0.79 | — | — | |
| SCHEMBL4401859 | 0.79 | — | — | |
| SCHEMBL5151196 | 0.79 | — | — | |
| Water SCHEMBL20530145 | 0.77 | — | — | |
| Bromide SCHEMBL7169762 | 0.75 | CETP (0.37) | — | |
| Hydrochloric Acid SCHEMBL8533649 | 0.75 | CETP (0.37) | — | |
| Hydrochloric Acid SCHEMBL6373287 | 0.75 | CETP (0.37) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 48 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3958292-B1 | CLEANING FLUID, METHOD OF CLEANING, AND METHOD OF PREPARING SEMICONDUCTOR WAFER | MITSUBISHI CHEM CORP (JP) | 2025-04-02 | — | — | EP | claimed |
| EP-3958292-A1 | CLEANING FLUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER | Mitsubishi Chemical Corporation (JP) | 2022-02-23 | — | — | EP | claimed |
| US-20220028681-A1 | Cleaning Fluid, Method of Cleaning Semiconductor Wafer, and Method of Preparing Semiconductor Wafer | MITSUBISHI CHEMICAL CORPORATION (JP) | 2022-01-27 | — | — | US | claimed |
| EP-3245668-B1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | CMC MAT INC (US) | 2021-06-30 | — | — | EP | claimed |
| WO-2020213487-A1 | CLEANING FLUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER | 三菱ケミカル株式会社 | 2020-10-22 | — | — | WO | claimed |
| US-10731109-B2 | Post chemical mechanical polishing formulations and method of use | ENTEGRIS, INC. (US) | 2020-08-04 | — | — | US | claimed |
| CN-106661518-B | Cleaning compositions for post-CMP use and methods relating thereto | 嘉柏微电子材料股份公司 | 2020-01-14 | — | — | CN | claimed |
| WO-2018191424-A1 | POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE | ENTEGRIS, INC. (US) | 2018-10-18 | — | — | WO | claimed |
| US-20180291309-A1 | POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2018-10-11 | — | — | US | claimed |
| US-9828574-B2 | Cleaning composition and method for cleaning semiconductor wafers after CMP | CABOT MICROELECTRONICS CORPORATION (US) | 2017-11-28 | — | — | US | claimed |
| EP-3245668-A1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | Cabot Microelectronics Corporation (US) | 2017-11-22 | — | — | EP | claimed |
| US-20170158992-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | CMC MATERIALS LLC | 2017-06-08 | — | — | US | claimed |
| EP-3169765-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | Cabot Microelectronics Corporation (US) | 2017-05-24 | — | — | EP | claimed |
| US-20160201016-A1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | CABOT MICROELECTRONICS CORPORATION | 2016-07-14 | — | — | US | claimed |
| WO-2016011331-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | CABOT MICROELECTRONICS CORPORATION (US) | 2016-01-21 | — | — | WO | claimed |
| EP-1904898-B1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2011-08-17 | — | — | EP | claimed |
| EP-1904898-A1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2008-04-02 | — | — | EP | claimed |
| WO-2006128642-A1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-07 | — | — | WO | claimed |
| EP-1729179-A1 | Method for fine line resist stripping | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-06 | — | — | EP | claimed |
| EP-3958292-B1 | CLEANING FLUID, METHOD OF CLEANING, AND METHOD OF PREPARING SEMICONDUCTOR WAFER | MITSUBISHI CHEM CORP (JP) | 2025-04-02 | — | — | EP | disclosed |
| CN-118830064-A | Treatment fluid and method of use thereof | 日本化药株式会社 | 2024-10-22 | — | — | CN | disclosed |
| CN-118814176-A | Cleaning composition for chip after chemical mechanical polishing, preparation method and application thereof | 浙江奥首材料科技有限公司 | 2024-10-22 | — | — | CN | disclosed |
| US-20240117278-A1 | TREATMENT LIQUID, CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT | FUJIFILM CORPORATION (JP) | 2024-04-11 | — | — | US | disclosed |
| CN-117625325-A | Cleaning composition and method for cleaning semiconductor wafers after chemical mechanical polishing | CMC材料股份有限公司 | 2024-03-01 | — | — | CN | disclosed |
| WO-2023176642-A1 | TREATMENT LIQUID AND METHOD FOR USING SAME | 日本化薬株式会社 | 2023-09-21 | — | — | WO | disclosed |
| WO-2022255220-A1 | PROCESSING SOLUTION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT | 富士フイルム株式会社 | 2022-12-08 | — | — | WO | disclosed |
| EP-3958292-A1 | CLEANING FLUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER | Mitsubishi Chemical Corporation (JP) | 2022-02-23 | — | — | EP | disclosed |
| US-20220028681-A1 | Cleaning Fluid, Method of Cleaning Semiconductor Wafer, and Method of Preparing Semiconductor Wafer | MITSUBISHI CHEMICAL CORPORATION (JP) | 2022-01-27 | — | — | US | disclosed |
| US-11124746-B2 | Post CMP cleaning composition | ENTEGRIS, INC. (US) | 2021-09-21 | — | — | US | disclosed |
| EP-3245668-B1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | CMC MAT INC (US) | 2021-06-30 | — | — | EP | disclosed |
| CN-112996893-A | POST chemical mechanical polishing (POST CMP) cleaning composition | 恩特格里斯公司 | 2021-06-18 | — | — | CN | disclosed |
| WO-2020213487-A1 | CLEANING FLUID, CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER | 三菱ケミカル株式会社 | 2020-10-22 | — | — | WO | disclosed |
| EP-3169765-B1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | CABOT MICROELECTRONICS CORP (US) | 2020-08-19 | — | — | EP | disclosed |
| US-10731109-B2 | Post chemical mechanical polishing formulations and method of use | ENTEGRIS, INC. (US) | 2020-08-04 | — | — | US | disclosed |
| US-20200148979-A1 | POST CMP CLEANING COMPOSITION | MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT | 2020-05-14 | — | — | US | disclosed |
| WO-2018191424-A1 | POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE | ENTEGRIS, INC. (US) | 2018-10-18 | — | — | WO | disclosed |
| US-10100272-B2 | Cleaning composition following CMP and methods related thereto | CABOT MICROELECTRONICS CORPORATION (US) | 2018-10-16 | — | — | US | disclosed |
| US-20180291309-A1 | POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2018-10-11 | — | — | US | disclosed |
| US-9828574-B2 | Cleaning composition and method for cleaning semiconductor wafers after CMP | CABOT MICROELECTRONICS CORPORATION (US) | 2017-11-28 | — | — | US | disclosed |
| EP-3245668-A1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | Cabot Microelectronics Corporation (US) | 2017-11-22 | — | — | EP | disclosed |
| US-20170158992-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | CMC MATERIALS LLC | 2017-06-08 | — | — | US | disclosed |
| EP-3169765-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | Cabot Microelectronics Corporation (US) | 2017-05-24 | — | — | EP | disclosed |
| US-20160201016-A1 | CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP | CABOT MICROELECTRONICS CORPORATION | 2016-07-14 | — | — | US | disclosed |
| WO-2016011331-A1 | CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO | CABOT MICROELECTRONICS CORPORATION (US) | 2016-01-21 | — | — | WO | disclosed |
| EP-1904898-B1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2011-08-17 | — | — | EP | disclosed |
| EP-1904898-A1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2008-04-02 | — | — | EP | disclosed |
| WO-2006128642-A1 | METHOD FOR FINE LINE RESIST STRIPPING | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-07 | — | — | WO | disclosed |
| EP-1729179-A1 | Method for fine line resist stripping | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-06 | — | — | EP | disclosed |
| EP-1729179-A1 | Method for fine line resist stripping | ATOTECH DEUTSCHLAND GMBH (DE) | 2006-12-06 | — | — | EP | disclosed |