Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADH1B | P00325 | 1/20 | 0.32 |
| ▸ | ADH1A | P07327 | 1/20 | 0.32 |
| ▸ | ADH7 | P40394 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL434845 | 0.80 | TSHR (0.43) | ADH1BADH1AADH7CA1 | |
| SCHEMBL896775 | 0.79 | — | — | |
| SCHEMBL234302 | 0.79 | ADH1B (0.32) | ADH1BADH1AADH7CA1 | |
| SCHEMBL1670019 | 0.78 | — | — | |
| SCHEMBL232432 | 0.74 | ADH1B (0.33) | ADH1BADH1AADH7CA1 | |
| SCHEMBL1669370 | 0.73 | — | — | |
| SCHEMBL21859090 | 0.73 | — | — | |
| SCHEMBL20500124 | 0.71 | — | — | |
| SCHEMBL231668 | 0.69 | — | — | |
| SCHEMBL17995612 | 0.69 | ADH1B (0.32) | ADH1BADH1AADH7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| US-12049576-B2 | Silicone pressure sensitive adhesive and method of making the same | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2024-07-30 | — | — | US | claimed |
| EP-4320180-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | Momentive Performance Materials Inc. (US) | 2024-02-14 | — | — | EP | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | claimed |
| US-20220325154-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | MOMENTIVE PERFORMANCE MATERIALS INC. | 2022-10-13 | — | — | US | claimed |
| WO-2022216482-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2022-10-13 | — | — | WO | claimed |
| US-20220189767-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2022-06-16 | — | — | US | claimed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | claimed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | claimed |
| US-11081337-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | Versum Materials U.S., LLC (US) | 2021-08-03 | — | — | US | claimed |
| EP-3844319-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | Versum Materials US, LLC (US) | 2021-07-07 | — | — | EP | claimed |
| WO-2020163359-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | VERSUM MATERIALS US, LLC (US) | 2020-08-13 | — | — | WO | claimed |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | VERSUM MATERIALS US, LLC (US) | 2020-08-06 | — | — | US | claimed |
| WO-2020072768-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2020-04-09 | — | — | WO | claimed |
| US-20180269057-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | claimed |
| WO-2018170126-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| US-9460912-B2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-10-04 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11649547-B2 | Deposition of carbon doped silicon oxide | ESRRG, ESRRB, DNMT3B | ADH1B 2402/4885ADH1A 1768/4885ADH7 3195/4885 |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | ESRRG, ESRRB, DNMT3B | ADH1B 2402/4885ADH1A 1768/4885ADH7 3195/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.