SCHEMBL896775

SCHEMBL896775

CCCN[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Dimethylamine SCHEMBL28352145 0.94
Acetone SCHEMBL29044283 0.86 PAOX (0.37)
Urea SCHEMBL29029493 0.84 CTSD (0.37)
SCHEMBL6575653 0.81
SCHEMBL5696489 0.80
SCHEMBL232916 0.79 ADH1B (0.32)
SCHEMBL234302 0.79 ADH1B (0.32)
SCHEMBL7922038 0.78 TSHR (0.50)
Lithium SCHEMBL30095513 0.77
SCHEMBL6744306 0.76 EPHX1 (0.50)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 154 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
CN-119900018-A Composition for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2025-04-29 CN claimed
WO-2023201271-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC (US) 2023-10-19 WO claimed
CN-112678833-B Nano silicon dioxide modified squalene organic silicon particles and preparation and use methods thereof 广西中烟工业有限责任公司 2023-08-04 CN claimed
US-11649547-B2 Deposition of carbon doped silicon oxide VERSUM MATERIALS US, LLC (US) 2023-05-16 US claimed
US-11631580-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials VERSUM MATERIALS US, LLC (US) 2023-04-18 US claimed
CN-110573651-B Formulations for depositing silicon doped hafnium oxide as ferroelectric material 弗萨姆材料美国有限责任公司 2022-07-22 CN claimed
EP-4013903-A1 COMPOSITIONS AND METHODS USING SAME FOR NON-CONFORMAL DEPOSITION OF SILICON-CONTAINING FILMS Versum Materials US, LLC (US) 2022-06-22 EP claimed
US-20220189767-A1 FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2022-06-16 US claimed
US-20210363639-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2021-11-25 US claimed
EP-2650399-B1 High temperature atomic layer deposition of silicon oxide thin films VERSUM MAT US LLC (US) 2019-09-11 EP claimed
US-10242864-B2 High temperature atomic layer deposition of silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2019-03-26 US claimed
US-20180269057-A1 Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials VERSUM MATERIALS US, LLC (US) 2018-09-20 US claimed
WO-2018170382-A1 SELECTIVE DEPOSITION ON SILICON CONTAINING SURFACES VERSUM MATERIALS US, LLC (US) 2018-09-20 WO claimed
WO-2018170126-A1 NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2018-09-20 WO claimed
CN-103374708-B High temperature atomic layer deposition of silicon oxide thin films 气体产品与化学公司 2017-05-17 CN claimed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
CN-103374708-A High temperature atomic layer deposition of silicon oxide thin films AIR PROD & CHEM 2013-10-30 CN claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed