Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADH1B | P00325 | 1/20 | 0.36 |
| ▸ | ADH1A | P07327 | 1/20 | 0.36 |
| ▸ | ADH7 | P40394 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL722047 | 0.78 | ADH1B (0.35) | ADH1BADH1AADH7TSHRALDH1A1 | |
| SCHEMBL234888 | 0.73 | ADH1B (0.30) | ADH1BADH1AADH7CA1 | |
| SCHEMBL15309854 | 0.73 | ADH1B (0.30) | ADH1BADH1AADH7CA1 | |
| SCHEMBL234646 | 0.73 | TSHR (0.41) | ADH1BADH1AADH7TSHRALDH1A1 | |
| SCHEMBL232432 | 0.72 | ADH1B (0.33) | ADH1BADH1AADH7TSHRALDH1A1 | |
| SCHEMBL235709 | 0.72 | TP53 (0.40) | — | |
| SCHEMBL234290 | 0.71 | ADH1B (0.31) | ADH1BADH1AADH7 | |
| SCHEMBL235167 | 0.71 | ADH1B (0.31) | ADH1BADH1AADH7 | |
| SCHEMBL25167281 | 0.69 | ADH1B (0.35) | ADH1BADH1AADH7TSHRALDH1A1 | |
| SCHEMBL896775 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 79 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| US-12049576-B2 | Silicone pressure sensitive adhesive and method of making the same | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2024-07-30 | — | — | US | claimed |
| EP-4320180-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | Momentive Performance Materials Inc. (US) | 2024-02-14 | — | — | EP | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | claimed |
| WO-2022216482-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2022-10-13 | — | — | WO | claimed |
| US-20220325154-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | MOMENTIVE PERFORMANCE MATERIALS INC. | 2022-10-13 | — | — | US | claimed |
| US-20220189767-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2022-06-16 | — | — | US | claimed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | claimed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | claimed |
| US-11081337-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | Versum Materials U.S., LLC (US) | 2021-08-03 | — | — | US | claimed |
| EP-3844319-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | Versum Materials US, LLC (US) | 2021-07-07 | — | — | EP | claimed |
| WO-2020163359-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | VERSUM MATERIALS US, LLC (US) | 2020-08-13 | — | — | WO | claimed |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | VERSUM MATERIALS US, LLC (US) | 2020-08-06 | — | — | US | claimed |
| WO-2020072768-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2020-04-09 | — | — | WO | claimed |
| WO-2018170126-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | claimed |
| US-20180269057-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-20250372367-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RES CORP (US) | 2025-12-04 | — | — | US | disclosed |
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | disclosed |
| US-20250166989-A1 | THERMAL FILM DEPOSITION | LAM RES CORP (US) | 2025-05-22 | — | — | US | disclosed |
| US-20250054747-A1 | CONFORMAL DEPOSITION OF SILICON NITRIDE | LAM RES CORP (US) | 2025-02-13 | — | — | US | disclosed |
| US-20250038003-A1 | LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS | LAM RESEARCH CORPORATION (US) | 2025-01-30 | — | — | US | disclosed |
| US-20250014890-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | LAM RESEARCH CORPORATION | 2025-01-09 | — | — | US | disclosed |
| US-20240410053-A1 | CONFORMAL SILICON OXIDE DEPOSITION USING AMINOSILANE AND CHLOROSILANE PRECURSORS | LAM RES CORP (US) | 2024-12-12 | — | — | US | disclosed |
| WO-2024243002-A1 | LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE | LAM RESEARCH CORPORATION (US) | 2024-11-28 | — | — | WO | disclosed |
| US-20240355624-A1 | IN-SITU CORE PROTECTION IN MULTI-PATTERNING | LAM RES CORP (US) | 2024-10-24 | — | — | US | disclosed |
| WO-2024220583-A1 | CAPACITANCE REDUCTION | LAM RESEARCH CORPORATION (US) | 2024-10-24 | — | — | WO | disclosed |
| US-12049576-B2 | Silicone pressure sensitive adhesive and method of making the same | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2024-07-30 | — | — | US | disclosed |
| WO-2024129962-A1 | LOW K DIELECTRIC GAPFILL | LAM RESEARCH CORPORATION (US) | 2024-06-20 | — | — | WO | disclosed |
| EP-4320180-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | Momentive Performance Materials Inc. (US) | 2024-02-14 | — | — | EP | disclosed |
| US-20240030026-A1 | PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240030062-A1 | INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION | LAM RESEARCH CORPORATION | 2024-01-25 | — | — | US | disclosed |
| WO-2024006211-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RESEARCH CORPORATION (US) | 2024-01-04 | — | — | WO | disclosed |
| WO-2023230170-A1 | HYBRID ATOMIC LAYER DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-11-30 | — | — | WO | disclosed |
| CN-117121172-A | Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program | 株式会社国际电气 | 2023-11-24 | — | — | CN | disclosed |
| WO-2023178203-A1 | SEAM-FREE AND CRACK-FREE DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-09-21 | — | — | WO | disclosed |
| WO-2023178216-A1 | LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE | LAM RESEARCH CORPORATION (US) | 2023-09-21 | — | — | WO | disclosed |
| WO-2023163950-A1 | THERMAL FILM DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-08-31 | — | — | WO | disclosed |
| WO-2023122557-A1 | CONFORMAL SILICON OXIDE DEPOSITION USING AMINOSILANE AND CHLOROSILANE PRECURSORS | LAM RESEARCH CORPORATION (US) | 2023-06-29 | — | — | WO | disclosed |
| WO-2023114641-A1 | CONFORMAL DEPOSITION OF SILICON NITRIDE | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023102440-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | LAM RESEARCH CORPORATION (US) | 2023-06-08 | — | — | WO | disclosed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | disclosed |
| US-11631580-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | VERSUM MATERIALS US, LLC (US) | 2023-04-18 | — | — | US | disclosed |
| WO-2022264430-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM | 株式会社KOKUSAI ELECTRIC | 2022-12-22 | — | — | WO | disclosed |
| WO-2022221881-A1 | INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION | LAM RESEARCH CORPORATION (US) | 2022-10-20 | — | — | WO | disclosed |
| WO-2022216482-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2022-10-13 | — | — | WO | disclosed |
| US-20220325154-A1 | SILICONE PRESSURE SENSITIVE ADHESIVE AND METHOD OF MAKING THE SAME | MOMENTIVE PERFORMANCE MATERIALS INC. | 2022-10-13 | — | — | US | disclosed |
| US-20220189767-A1 | FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2022-06-16 | — | — | US | disclosed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | disclosed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | disclosed |
| US-11081337-B2 | Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials | Versum Materials U.S., LLC (US) | 2021-08-03 | — | — | US | disclosed |
| EP-3844319-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | Versum Materials US, LLC (US) | 2021-07-07 | — | — | EP | disclosed |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2021-04-27 | — | — | US | disclosed |
| US-10916437-B2 | Methods of forming micropatterns and substrate processing apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-02-09 | — | — | US | disclosed |
| WO-2020163359-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | VERSUM MATERIALS US, LLC (US) | 2020-08-13 | — | — | WO | disclosed |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | VERSUM MATERIALS US, LLC (US) | 2020-08-06 | — | — | US | disclosed |
| WO-2020072768-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2020-04-09 | — | — | WO | disclosed |
| US-20190198342-A1 | Methods of Forming Micropatterns and Substrate Processing Apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-27 | — | — | US | disclosed |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VERSUM MATERIALS US, LLC (US) | 2019-06-20 | — | — | US | disclosed |
| US-10242864-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2019-03-26 | — | — | US | disclosed |
| WO-2018170126-A1 | NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | WO | disclosed |
| US-20180269057-A1 | Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials | VERSUM MATERIALS US, LLC (US) | 2018-09-20 | — | — | US | disclosed |
| US-9887080-B2 | Method of forming SiOCN material layer and method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-02-06 | — | — | US | disclosed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | disclosed |
| US-20170186603-A1 | METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-06-29 | — | — | US | disclosed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | disclosed |
| US-9460912-B2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-10-04 | — | — | US | disclosed |
| EP-2360190-B1 | SOLID CATALYST COMPONENT AND CATALYST FOR POLYMERIZATION OF OLEFINS, AND PROCESS FOR PRODUCTION OF OLEFIN POLYMERS USING SAME | TOHO TITANIUM CO LTD (JP) | 2015-10-14 | — | — | EP | disclosed |
| US-8648001-B2 | Aminosilane compounds, catalyst components and catalysts for olefin polymerization, and process for production of olefin polymers with the same | TOHO TITANIUM CO., LTD. (JP) | 2014-02-11 | — | — | US | disclosed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | disclosed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | disclosed |
| US-8426537-B2 | Solid catalyst component and catalyst for polymerization of olefins, and process for production of olefin polymers using same | TOHO TITANIUM CO., LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| US-20120053310-A1 | Aminosilane Compounds, Catalyst Components and Catalysts for Olefin Polymerization, and Process for Production of Olefin Polymers with the Same | TOHO TITANIUM CO., LTD. (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20120004378-A1 | SOLID CATALYST COMPONENT AND CATALYST FOR POLYMERIZATION OF OLEFINS, AND PROCESS FOR PRODUCTION OF OLEFIN POLYMERS USING SAME | TOHO TITANIUM CO., LTD (JP) | 2012-01-05 | — | — | US | disclosed |
| EP-2360190-A1 | SOLID CATALYST COMPONENT AND CATALYST FOR POLYMERIZATION OF OLEFINS, AND PROCESS FOR PRODUCTION OF OLEFIN POLYMERS USING SAME | Toho Titanium CO., LTD. (JP) | 2011-08-24 | — | — | EP | disclosed |
| US-20100190942-A1 | AMINOSILANE COMPOUNDS, CATALYST COMPONENTS AND CATALYSTS FOR OLEFIN POLYMERIZATION, AND PROCESS FOR PRODUCTION OF OLEFIN POLYMERS WITH THE SAME | TOHO CATALYST CO., LTD. (JP) | 2010-07-29 | — | — | US | disclosed |
| EP-1908767-A1 | AMINOSILANE COMPOUNDS, CATALYST COMPONENTS AND CATALYSTS FOR OLEFIN POLYMERIZATION, AND PROCESS FOR PRODUCTION OF OLEFIN POLYMERS WITH THE SAME | Toho Catalyst Co., Ltd. (JP) | 2008-04-09 | — | — | EP | disclosed |
| EP-1908767-A1 | AMINOSILANE COMPOUNDS, CATALYST COMPONENTS AND CATALYSTS FOR OLEFIN POLYMERIZATION, AND PROCESS FOR PRODUCTION OF OLEFIN POLYMERS WITH THE SAME | Toho Catalyst Co., Ltd. (JP) | 2008-04-09 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250014890-A1 | CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF | CNTN1, NCDN, SEPTIN6 | ADH1B 3597/4885ADH1A 3603/4885ADH7 3804/4885 |
| US-10242864-B2 | High temperature atomic layer deposition of silicon oxide thin films | SCN4A, RTN3, RPS4X | ADH1B 1228/4885ADH1A 243/4885ADH7 2318/4885 |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | ESRRG, ESRRB, DNMT3B | ADH1B 2402/4885ADH1A 1768/4885ADH7 3195/4885 |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VIM, CDH1, ALDOA | ADH1B 939/4885ADH1A 10/4885ADH7 1127/4885 |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | ESRRG, ESRRB, DNMT3B | ADH1B 2402/4885ADH1A 1768/4885ADH7 3195/4885 |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VIM, CDH1, ALDOA | ADH1B 939/4885ADH1A 10/4885ADH7 1127/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.