SCHEMBL234927

SCHEMBL234927

O=C(O)C(O)C(OCCO)C(=O)O

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.39
CYP2C9 P11712 1/20 0.37
PDE4A P27815 1/20 0.37
PGD P52209 2/20 0.35
OR51E2 Q9H255 1/20 0.33
GBA1 P04062 1/20 0.31
SLC1A3 P43003 3/20 0.31
SLC1A2 P43004 3/20 0.31
SLC1A1 P43005 3/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethylene Glycol SCHEMBL3741933 0.88 PGD (0.35) TSHRCYP2C9PDE4APGD
Di(Hydroxyethyl)Ether SCHEMBL3730840 0.87 TSHR (0.39) TSHRPGD
SCHEMBL3463165 0.87 TSHR (0.36) TSHRCYP2C9PDE4APGDOR51E2
SCHEMBL27864055 0.85 TSHR (0.37) TSHRCYP2C9OR51E2SLC1A3SLC1A2
1,4-Butanediol SCHEMBL3736478 0.85 ACHE (0.33) TSHRCYP2C9PGD
SCHEMBL11314040 0.82 TSHR (0.32) TSHRCYP2C9PDE4APGD
SCHEMBL9558576 0.82 TSHR (0.39) TSHRCYP2C9PDE4APGDSLC1A3
SCHEMBL28101475 0.82 TSHR (0.39) TSHRCYP2C9PDE4APGDSLC1A3
Ethylene Glycol SCHEMBL3732641 0.81 ATM (0.37) TSHRPGD
Propylene Glycol SCHEMBL3738557 0.81 TDP1 (0.36) TSHRCYP2C9PDE4APGDOR51E2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 150 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106848215-B A kind of high-tap density lithium ion battery ternary material and its preparation method and application 宁波中车新能源科技有限公司 2019-09-13 CN disclosed
US-10263059-B2 Light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2019-04-16 US disclosed
US-20180254311-A1 LIGHT EMITTING DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2018-09-06 US disclosed
US-9911801-B2 Light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2018-03-06 US disclosed
US-20170271426-A1 LIGHT EMITTING DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2017-09-21 US disclosed
EP-2105966-B1 Display device SEMICONDUCTOR ENERGY LAB (JP) 2017-08-23 EP disclosed
US-9679955-B2 Light emitting device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2017-06-13 US disclosed
CN-106848215-A A kind of high-tap density lithium ion battery ternary material and its preparation method and application 宁波中车新能源科技有限公司 2017-06-13 CN disclosed
WO-2017021983-A1 PARTICULATE DELIVERY SYSTEMS RUBICON RESEARCH PRIVATE LIMITED (IN) 2017-02-09 WO disclosed
CN-106268844-A Preparation method of photocatalyst bismuth ferrite 深圳市微纳集成电路与系统应用研究院 2017-01-04 CN disclosed
EP-1052700-A1 Semiconductor TFT device and method of fabricating same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2000-11-15 EP disclosed
EP-1052701-A2 Capacitor, semiconductor device, and manufacturing method thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2000-11-15 EP disclosed
CN-1272695-A Electro-optical device and electronic apparatus SEMICONDUCTOR ENERGY LAB (JP) 2000-11-08 CN disclosed
EP-1041641-A2 A method for manufacturing an electrooptical device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2000-10-04 EP disclosed
US-6074900-A Method for producing semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2000-06-13 US disclosed
US-5939731-A MIS semiconductor device and method for fabricating the same SEMICONDUCTOR ENERGY LAB (JP) 1999-08-17 US disclosed
US-5830786-A Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1998-11-03 US disclosed
US-5627084-A PREFERENTIAL DOPING OF SEMICONDUCTOR SUBSTRATE; ACTIVATION BY LASERS SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1997-05-06 US disclosed
CN-1113032-A Method for manufacturing semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 1995-12-06 CN disclosed
CN-1111400-A A method for manufacturing a semiconductor and an apparatus for the same SEMICONDUCTOR ENERGY LAB (JP) 1995-11-08 CN disclosed