Known targets — ChEMBL curated mechanism
AGTR1DHFRGABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTNR3C2PBP2XPTGS1PTGS2VKORC1blablaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAftsImrcAmrcBmrdApbp1apbp1bpbp2apbp2bpbp3polthyA
The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL28309421 | 0.93 | CHRNB2 (0.57) | — | |
| Tetramethylammonium Ion SCHEMBL7464200 | 0.93 | — | — | |
| Tetramethylammonium Ion SCHEMBL4108131 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL18297314 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL15477 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL9114012 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL4388942 | 0.83 | CHRNB2 (0.67) | — | |
| Tetramethylammonium Ion SCHEMBL7166906 | 0.83 | CHRNB2 (0.67) | — | |
| Tetramethylammonium Ion SCHEMBL9114017 | 0.83 | — | — | |
| Tetramethylammonium Ion SCHEMBL3199241 | 0.83 | CHRNB2 (0.67) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2352167-B1 | ABRASIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | ASAHI GLASS CO LTD (JP) | 2017-02-15 | — | — | EP | claimed |
| US-8304346-B2 | Abrasive composition and method for manufacturing semiconductor integrated circuit device | ASAHI GLASS COMPANY, LIMITED (JP) | 2012-11-06 | — | — | US | claimed |
| US-20110212621-A1 | ABRASIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | ASAHI GLASS COMPANY, LIMITED (JP) | 2011-09-01 | — | — | US | claimed |
| EP-2352167-A1 | ABRASIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | Asahi Glass Company Limited (JP) | 2011-08-03 | — | — | EP | claimed |
| CN-113820920-B | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2023-07-04 | — | — | CN | disclosed |
| CN-115185157-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2022-10-14 | — | — | CN | disclosed |
| CN-113820920-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2021-12-21 | — | — | CN | disclosed |
| CN-107850844-B | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2021-09-07 | — | — | CN | disclosed |
| CN-110114350-A | Substituted guanidine compounds | 宇部兴产株式会社 | 2019-08-09 | — | — | CN | disclosed |
| CN-107922379-A | Substituted guanidine derivatives | 宇部兴产株式会社 | 2018-04-17 | — | — | CN | disclosed |
| EP-2352167-B1 | ABRASIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | ASAHI GLASS CO LTD (JP) | 2017-02-15 | — | — | EP | disclosed |
| CN-104169322-B | The manufacture method of Romp polymer hydride and resin combination | 日本瑞翁株式会社 | 2016-08-31 | — | — | CN | disclosed |
| US-20110212621-A1 | ABRASIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | ASAHI GLASS COMPANY, LIMITED (JP) | 2011-09-01 | — | — | US | disclosed |
| EP-2352167-A1 | ABRASIVE COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE | Asahi Glass Company Limited (JP) | 2011-08-03 | — | — | EP | disclosed |
| CN-101323427-B | Method for preparing silicon micro-suspension girder leadless piezoelectric thick film executor | UNIV HUAZHONG SCIENCE TECH | 2010-12-29 | — | — | CN | disclosed |
| CN-101122026-A | Polysilicon planarization solution for planarizing low temperature polysilicon film panel | MALLINCKRODT BAKER INC (US) | 2008-02-13 | — | — | CN | disclosed |
| JP-2004319584-A | POLISHING PAD AND ITS MANUFACTURING METHOD | NIHON MICRO COATING CO LTD | 2004-11-11 | — | — | JP | disclosed |
| EP-0605246-B1 | Sight line detector and camera with the detector | CANON KK (JP) | 2001-09-05 | — | — | EP | disclosed |
| US-5873003-A | Sight line detector, display unit, view finder and unit and camera with the same display unit | CANON KABUSHIKI KAISHA (JP) | 1999-02-16 | — | — | US | disclosed |
| EP-0605246-A2 | Sight line detector, display unit, view finder and unit and camera with the same display unit | CANON KABUSHIKI KAISHA (JP) | 1994-07-06 | — | — | EP | disclosed |