SCHEMBL242579

SCHEMBL242579

CC(O[SiH3])C(c1ccccc1)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 2/20 0.39
ADRA2C P18825 2/20 0.39
TSHR P16473 2/20 0.39
CHRM2 P08172 1/20 0.39
ADRA1A P35348 1/20 0.39
RGS12 O14924 1/20 0.39
GLA P06280 1/20 0.39
CYP3A4 P08684 1/20 0.39
CYP2C9 P11712 1/20 0.39
PKM P14618 1/20 0.39
ALOX15 P16050 1/20 0.39
ALOX12 P18054 1/20 0.39
NFKB1 P19838 1/20 0.39
HTR2A P28223 1/20 0.39
CYP2C19 P33261 1/20 0.39
THPO P40225 1/20 0.39
GNAI1 P63096 1/20 0.39
HSD17B10 Q99714 1/20 0.39
TAAR1 Q96RJ0 3/20 0.38
MEN1 O00255 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25082860 0.78 THRB (0.42) CYP2D6ADRA2CTAAR1KMT2ATHRB
SCHEMBL523682 0.75 HCAR2 (0.42) CYP2D6ADRA2CTSHRTAAR1ADRA2A
SCHEMBL18297941 0.71 THRB (0.41) TSHRCYP3A4MEN1KMT2ATHRB
SCHEMBL711279 0.71 THRB (0.41) CYP2D6ADRA2CTSHRCYP3A4TAAR1
SCHEMBL704991 0.71 LMNA (0.43) HTR2ATAAR1MEN1KMT2ALMNA
SCHEMBL22518435 0.71 ADRA2C (0.38) CYP2D6ADRA2CTSHRCHRM2ADRA1A
SCHEMBL9315151 0.71 HCAR2 (0.44) CYP2D6TSHRCYP3A4HSD17B10MEN1
SCHEMBL1315151 0.71 ESR1 (0.48) CYP2D6ADRA2CTSHRCHRM2ADRA1A
SCHEMBL15586 0.71 TAAR1 (0.48) CYP2D6ADRA2CTSHRTAAR1ADRA2A
SCHEMBL24450258 0.70 MMP9 (0.49) CYP2D6TSHRCYP2C9CYP2C19MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 374 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12331164-B2 Curable siloxane resin composition KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2025-06-17 US claimed
CN-115362203-B Moisture-curable non-yellowing clear compositions and methods of making the same 迈图高新材料公司 2024-07-16 CN claimed
US-20230106223-A1 MOISTURE-CURABLE NON-YELLOWING CLEAR COMPOSITION AND METHOD OF MAKING THEREOFROM MOMENTIVE PERFORMANCE MATERIALS INC. 2023-04-06 US claimed
US-20230078587-A1 CURABLE SILOXANE RESIN COMPOSITION KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2023-03-16 US claimed
CN-115362203-A Moisture-curable non-yellowing clear composition and preparation method thereof 迈图高新材料公司 2022-11-18 CN claimed
EP-4081585-A1 MOISTURE-CURABLE NON-YELLOWING CLEAR COMPOSITION AND METHOD OF MAKING THEREOFROM Momentive Performance Materials Inc. (US) 2022-11-02 EP claimed
WO-2021158370-A1 MOISTURE-CURABLE NON-YELLOWING CLEAR COMPOSITION AND METHOD OF MAKING THEREOFROM MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2021-08-12 WO claimed
CN-108586748-A A kind of benzocyclobutene functionalization organosilicon polymer and its preparation method and application 复旦大学 2018-09-28 CN claimed
US-20130153263-A1 INORGANIC NANOFILLER, PARTIAL DISCHARGE RESISTANT ENAMELED WIRE INCLUDING THE SAME, AND PREPARING METHOD OF THE ENAMELED WIRE SEJONG UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION (KR) 2013-06-20 US claimed
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
EP-1436018-A1 NITRIC OXIDE-RELEASING COATED MEDICAL DEVICES AND METHOD OF PREPARING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2004-07-14 EP claimed
WO-2003026717-A1 NITRIC OXIDE-RELEASING COATED MEDICAL DEVICES AND METHOD OF PREPARING SAME THE GOVERNMENT OF THE UNITED STATES OF AMERICA, REPRESENTED BY THE SECRETARY, DEPARTMENT OF HEALTH AND HUMAN SERVICES (US) 2003-04-03 WO claimed