SCHEMBL2437564

SCHEMBL2437564

O=S(=O)(Oc1ccc([S+](c2ccccc2)c2ccc(OS(=O)(=O)c3c(F)c(F)c(F)c(F)c3F)cc2)cc1)c1c(F)c(F)c(F)c(F)c1F.O=S(=O)(Oc1ccc([S+](c2ccccc2)c2ccc(OS(=O)(=O)c3c(F)c(F)c(F)c(F)c3F)cc2)cc1)c1c(F)c(F)c(F)c(F)c1F.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)[O-]

nearest known ligand 0.33

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
TDP1 Q9NUW8 1/20 0.32
MEN1 O00255 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
KMT2A Q03164 1/20 0.31
SENP8 Q96LD8 1/20 0.31
SENP7 Q9BQF6 1/20 0.31
SENP6 Q9GZR1 1/20 0.31
CA12 O43570 1/20 0.30
CA7 P43166 1/20 0.30
CA13 Q8N1Q1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2437600 0.98 CA1 (0.33) CA1CA2TDP1MEN1NPC1
SCHEMBL3421608 0.94 CA1 (0.31) CA1CA2TDP1
Trifluoromethanesulfonic Acid SCHEMBL3422375 0.91 CA1 (0.34) CA1CA2TDP1MEN1NPC1
SCHEMBL2438995 0.90 MEN1 (0.32) MEN1NPC1RAB9AKMT2ASENP8
SCHEMBL2439557 0.90 CA1 (0.34) CA1CA2TDP1MEN1NPC1
SCHEMBL2437010 0.89 MEN1 (0.31) MEN1NPC1RAB9AKMT2ASENP8
SCHEMBL2437745 0.88 TDP1 (0.37) CA1CA2TDP1MEN1NPC1
SCHEMBL4839664 0.87 CA1 (0.36) CA1CA2TDP1MEN1NPC1
SCHEMBL4423397 0.87 TDP1 (0.40) CA1CA2TDP1MEN1NPC1
SCHEMBL2437174 0.87 TDP1 (0.40) CA1CA2TDP1MEN1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2078028-B1 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA (US) 2011-09-07 EP claimed
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US claimed
EP-2121783-A1 POLYMERS USEFUL IN PHOTORESIST COMPOSITIONS AND COMPOSITIONS THEREOF AZ Electronic Materials USA Corp. (US) 2009-11-25 EP claimed
US-7601480-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-10-13 US claimed
EP-2102184-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2009-09-23 EP claimed
EP-2102156-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2009-09-23 EP claimed
EP-2078028-A1 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2009-07-15 EP claimed
US-20090087782-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2009-04-02 US claimed
US-7491482-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-02-17 US claimed
WO-2008087549-A1 POLYMERS USEFUL IN PHOTORESIST COMPOSITIONS AND COMPOSITIONS THEREOF AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-07-24 WO claimed
US-20080171270-A1 Polymers Useful in Photoresist Compositions and Compositions Thereof AZ ELECTRONIC MATERIALS USA CORP. 2008-07-17 US claimed
US-20080153032-A1 Photoactive Compounds MERCK PATENT GMBH (DE) 2008-06-26 US claimed
US-7390613-B1 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2008-06-24 US claimed
WO-2008068617-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-06-12 WO claimed
WO-2008068610-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-06-12 WO claimed
US-20080131811-A1 Photoactive Compounds MERCK PATENT GMBH (DE) 2008-06-05 US claimed
WO-2008041123-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-04-10 WO claimed
US-20080085463-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. 2008-04-10 US claimed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US claimed
US-9146467-B2 Coating compositions MERCK PATENT GMBH (DE) 2015-09-29 US disclosed
US-20130236833-A1 COATING COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2013-09-12 US disclosed
US-8455176-B2 Coating composition AZ ELECTRONIC MATERIALS USA CORP. (US) 2013-06-04 US disclosed
US-8252503-B2 Photoresist compositions AZ ELECTRONIC MATERIALS USA CORP. (US) 2012-08-28 US disclosed
EP-2078028-B1 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA (US) 2011-09-07 EP disclosed
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
EP-2197924-A2 POLYMERS FOR USE IN PHOTORESIST COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2010-06-23 EP disclosed
US-20100119972-A1 COATING COMPOSITION MERCK PATENT GMBH (DE) 2010-05-13 US disclosed
EP-2121783-A1 POLYMERS USEFUL IN PHOTORESIST COMPOSITIONS AND COMPOSITIONS THEREOF AZ Electronic Materials USA Corp. (US) 2009-11-25 EP disclosed
EP-2078028-A1 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2009-07-15 EP disclosed
US-7547501-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-06-16 US disclosed
US-7521170-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-04-21 US disclosed
US-20090087782-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2009-04-02 US disclosed
WO-2009027794-A2 POLYMERS FOR USE IN PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2009-03-05 WO disclosed
US-20090053652-A1 PHOTORESIST COMPOSITIONS MERCK PATENT GMBH (DE) 2009-02-26 US disclosed
WO-2008087549-A1 POLYMERS USEFUL IN PHOTORESIST COMPOSITIONS AND COMPOSITIONS THEREOF AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-07-24 WO disclosed
US-20080171270-A1 Polymers Useful in Photoresist Compositions and Compositions Thereof AZ ELECTRONIC MATERIALS USA CORP. 2008-07-17 US disclosed
WO-2008041123-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-04-10 WO disclosed
US-20080085463-A1 PHOTOACTIVE COMPOUNDS AZ ELECTRONICS MATERIALS USA CORP. 2008-04-10 US disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080131811-A1 Photoactive Compounds PRXL2A, PRDX2, AOC2 CA1 1193/4885CA2 116/4885TDP1 4599/4885
US-20080153032-A1 Photoactive Compounds SUN2, CRY2, SCO2 CA1 1059/4885CA2 105/4885TDP1 4803/4885
US-20100119972-A1 COATING COMPOSITION S100A9, CAPG, C5 CA1 382/4885CA2 2450/4885TDP1 2553/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.