SCHEMBL244014

SCHEMBL244014

CC(C)(C)Oc1cccc([S+](c2cccc(OC(C)(C)C)c2)c2cccc(OC(C)(C)C)c2)c1

nearest known ligand 0.40

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 1/20 0.40
CYP3A4 P08684 1/20 0.33
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
ALDH1A1 P00352 1/20 0.32
HPGD P15428 1/20 0.32
KMT2A Q03164 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
CETP P11597 1/20 0.32
RIPK1 Q13546 1/20 0.30
PRKDC P78527 1/20 0.30
ACHE P22303 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29515905 1.00 KIF11 (0.40) KIF11CYP3A4KDM4EMEN1ALDH1A1
SCHEMBL244494 0.94 KIF11 (0.40) KIF11CYP3A4KDM4EMEN1ALDH1A1
SCHEMBL29827873 0.94 KIF11 (0.40) KIF11CYP3A4KDM4EMEN1ALDH1A1
SCHEMBL246752 0.94 KIF11 (0.40) KIF11CYP3A4KDM4EMEN1ALDH1A1
SCHEMBL4085684 0.94 KIF11 (0.40) KIF11CYP3A4KDM4EMEN1ALDH1A1
Hydrochloric Acid SCHEMBL6760310 0.93 KIF11 (0.39) KIF11CYP3A4CETPRIPK1
SCHEMBL5415682 0.89 KIF11 (0.41) KIF11CETPRIPK1
SCHEMBL8322099 0.85 ALDH1A1 (0.33) KIF11KDM4EMEN1ALDH1A1KMT2A
SCHEMBL8317929 0.85 ALDH1A1 (0.33) KIF11KDM4EMEN1ALDH1A1KMT2A
SCHEMBL8321721 0.84 KIF11 (0.38) KIF11CYP3A4KDM4EMEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 592 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
US-9075306-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 US claimed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
US-20260093177-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-02 US disclosed
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-27 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4202548-B1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHINETSU CHEMICAL CO (JP) 2025-11-19 EP disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-12351742-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-08 US disclosed
US-20010036593-A1 Chemical amplification type resist composition SHIN-ETSU CHEMICAL CO., LTD. 2001-11-01 US disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010031421-A1 Chemical amplification resist compositions SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed
EP-1117003-A1 Chemical amplification type resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2001-07-18 EP disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093177-A1 PATTERNING PROCESS ARFGAP1, ARF1, ARF4 KIF11 3136/4885CYP3A4 969/4885KDM4E 589/4885
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film RAD51, CDH1, SMC2 KIF11 3000/4885CYP3A4 4142/4885KDM4E 1678/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.