SCHEMBL246393

SCHEMBL246393

Sc1ccc(Oc2ccc([S+](c3ccccc3)c3ccccc3)cc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 7/20 0.44
TSHR P16473 1/20 0.44
NR1H2 P55055 1/20 0.40
BAX Q07812 1/20 0.40
MAOA P21397 1/20 0.40
CA1 P00915 2/20 0.36
CA2 P00918 2/20 0.36
GSTP1 P09211 1/20 0.34
SOS1 Q07889 1/20 0.34
CA9 Q16790 1/20 0.34
PARP10 Q53GL7 1/20 0.34
PLA2G2A P14555 1/20 0.34
SRD5A2 P31213 2/20 0.33
MEN1 O00255 1/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
KMT2A Q03164 1/20 0.33
NLRP3 Q96P20 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2222944 1.00 LTA4H (0.44) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL686239 0.89 LTA4H (0.55) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL686232 0.87 LTA4H (0.60) LTA4HTSHRNR1H2BAXMAOA
Benzene SCHEMBL1705757 0.87 IDO1 (0.35)
SCHEMBL361169 0.87 IDO1 (0.35)
SCHEMBL5397497 0.84 LTA4H (0.63) LTA4HTSHRNR1H2BAXMAOA
Water SCHEMBL10872926 0.82 LTA4H (0.60) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL487535 0.82 LTA4H (0.67) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL5430762 0.81 LTA4H (0.46) LTA4HTSHRNR1H2BAXMAOA
SCHEMBL17416086 0.80 LTA4H (0.63) LTA4HTSHRNR1H2BAXMAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 618 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
EP-2513722-B1 LED CURABLE LIQUID RESIN COMPOSITIONS FOR ADDITIVE FABRICATION, PROCESS FOR MAKING A THREE-DIMENSIONAL OBJECT USING THE SAME DSM IP ASSETS BV (NL) 2017-01-25 EP claimed
US-9075306-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 US claimed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-2513722-A1 LED CURABLE LIQUID RESIN COMPOSITIONS FOR ADDITIVE FABRICATION DSM IP Assets B.V. (NL) 2012-10-24 EP claimed
US-20120259031-A1 LED CURABLE LIQUID RESIN COMPOSITIONS FOR ADDITIVE FABRICATION DSM IP ASSETS, B.V. (NL) 2012-10-11 US claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
WO-2011075555-A1 LED CURABLE LIQUID RESIN COMPOSITIONS FOR ADDITIVE FABRICATION DSM IP ASSETS, B.V. (NL) 2011-06-23 WO claimed
EP-1497079-B1 COATED ABRASIVE ARTICLE, METHOD FOR MAKING THE SAME AND METHODS OF ABRADING A WORKPIECE 3M INNOVATIVE PROPERTIES CO (US) 2008-05-21 EP claimed
EP-1497079-A1 COATED ABRASIVE ARTICLE 3M Innovative Properties Company (US) 2005-01-19 EP claimed
US-6773474-B2 PHOTOPOLYMERIZABLE COATING FOR PARTICLES; ABRASING SUBSTRATE 3M INNOVATIVE PROPERTIES COMPANY 2004-08-10 US claimed
WO-2003089194-A1 COATED ABRASIVE ARTICLE 3M INNOVATIVE PROPERTIES COMPANY (US) 2003-10-30 WO claimed
US-20030200701-A1 Coated abrasive article 3M INNOVATIVE PROPERTIES COMPANY 2003-10-30 US claimed
US-6440634-B1 MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-08-27 US claimed
US-20260093177-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-02 US disclosed
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-27 US disclosed
EP-0544842-A1 ELECTRON BEAM CURABLE EPOXY COMPOSITIONS CRIVELLO, James V. (US) 1993-06-09 EP disclosed
WO-1992012183-A1 ELECTRON BEAM CURABLE EPOXY COMPOSITIONS CRIVELLO JAMES V (US) 1992-07-23 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093177-A1 PATTERNING PROCESS ARFGAP1, ARF1, ARF4 LTA4H 1046/4885TSHR 2852/4885NR1H2 1557/4885
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film RAD51, CDH1, SMC2 LTA4H 1504/4885TSHR 3629/4885NR1H2 1778/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.