Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2A6 | P11509 | 7/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 5/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.42 |
| ▸ | CA1 | P00915 | 2/20 | 0.42 |
| ▸ | CA2 | P00918 | 2/20 | 0.42 |
| ▸ | CA7 | P43166 | 1/20 | 0.42 |
| ▸ | CA9 | Q16790 | 1/20 | 0.42 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.40 |
| ▸ | UGT2B7 | P16662 | 1/20 | 0.40 |
| ▸ | CES2 | O00748 | 1/20 | 0.38 |
| ▸ | CES1 | P23141 | 1/20 | 0.38 |
| ▸ | GSTP1 | P09211 | 1/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
| ▸ | RELA | Q04206 | 1/20 | 0.37 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.37 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.37 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29404511 | 1.00 | CYP2A6 (0.48) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL12748739 | 0.85 | CYP2A6 (0.48) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL28906946 | 0.81 | CYP2A6 (0.44) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL29450253 | 0.81 | CYP2A6 (0.44) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL15109051 | 0.81 | CYP2A6 (0.44) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL30047516 | 0.81 | CYP2A6 (0.44) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL4123829 | 0.81 | CYP2A6 (0.44) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| Trifluoromethanesulfonic Acid SCHEMBL30536275 | 0.80 | L3MBTL1 (0.40) | TDP1CA1CA2CA9 | |
| SCHEMBL13146765 | 0.79 | CYP2A6 (0.48) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 | |
| SCHEMBL32672687 | 0.79 | CYP2A6 (0.46) | CYP2A6TDP1CYP1A2ALDH1A1CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 586 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9075306-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-07 | — | — | US | claimed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | claimed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | claimed |
| EP-1780198-B1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-10-05 | — | — | EP | claimed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | claimed |
| US-20260093177-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-02 | — | — | US | disclosed |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-27 | — | — | US | disclosed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4202548-B1 | MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM | SHINETSU CHEMICAL CO (JP) | 2025-11-19 | — | — | EP | disclosed |
| US-12351742-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-08 | — | — | US | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| WO-2025058368-A1 | PHOTOSENSITIVE RESIN COMPOSITION, INSULATION FILM, AND SEMICONDUCTOR DEVICE | 주식회사 엘지화학 | 2025-03-20 | — | — | WO | disclosed |
| US-20010038971-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-08 | — | — | US | disclosed |
| US-20010036593-A1 | Chemical amplification type resist composition | SHIN-ETSU CHEMICAL CO., LTD. | 2001-11-01 | — | — | US | disclosed |
| US-20010035394-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| US-20010033994-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |
| US-20010031421-A1 | Chemical amplification resist compositions | SHIN-ETSU CHEMICAL CO., LTD. OF (JP) | 2001-10-18 | — | — | US | disclosed |
| EP-1136885-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260093177-A1 | PATTERNING PROCESS | ARFGAP1, ARF1, ARF4 | CYP2A6 2168/4885TDP1 2834/4885CYP1A2 1927/4885 |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | RAD51, CDH1, SMC2 | CYP2A6 3840/4885TDP1 2423/4885CYP1A2 2924/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.