SCHEMBL2475726

SCHEMBL2475726

CN(C)N=Nc1ccc(Cc2ccc(N=NN(C)C)cc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ LMNA P02545 1/20 0.50
▸ MAPT P10636 5/20 0.47
▸ NPC1 O15118 2/20 0.47
▸ RAB9A P51151 2/20 0.47
▸ TSHR P16473 3/20 0.44
▸ TDP1 Q9NUW8 3/20 0.44
▸ ALDH1A1 P00352 3/20 0.44
▸ CYP3A4 P08684 2/20 0.44
▸ MAPK1 P28482 2/20 0.44
▸ ADRA2A P08913 1/20 0.40
▸ ADRA2B P18089 1/20 0.40
▸ ADRA2C P18825 1/20 0.40
▸ KDM4E B2RXH2 3/20 0.40
▸ PKM P14618 2/20 0.40
▸ EGFR P00533 1/20 0.35
▸ SLC22A2 O15244 1/20 0.35
▸ HSD17B10 Q99714 1/20 0.34
▸ NOS3 P29474 2/20 0.33
▸ NOS1 P29475 2/20 0.33
▸ NOS2 P35228 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2474219 0.85 LMNA (0.61) LMNAMAPTNPC1RAB9ATSHR
SCHEMBL2474220 0.85 LMNA (0.61) LMNAMAPTNPC1RAB9ATSHR
SCHEMBL17991985 0.79 LMNA (0.45) LMNAMAPTNPC1RAB9ATDP1
SCHEMBL6517951 0.78 MAPT (0.56) LMNAMAPTNPC1RAB9ATSHR
SCHEMBL6517947 0.78 MAPT (0.56) LMNAMAPTNPC1RAB9ATSHR
SCHEMBL7862256 0.76 LMNA (0.53) LMNAMAPTNPC1RAB9ATSHR
SCHEMBL17709235 0.76 LMNA (0.53) LMNAMAPTNPC1RAB9ATSHR
SCHEMBL12966535 0.76 PPARA (0.58) —
SCHEMBL12966540 0.76 LTA4H (0.60) LMNAMAPTNPC1RAB9A
SCHEMBL12966537 0.76 CYP1A2 (0.46) MAPTNPC1RAB9ATDP1PKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 — — EP disclosed
EP-1160848-B1 Composition for silica-based film formation JSR CORP (JP) 2011-10-05 — — EP disclosed
EP-1245638-B1 Composition for insulating film formation JSR CORP (JP) 2009-01-14 — — EP disclosed
US-7462678-B2 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2008-12-09 — — US disclosed
US-7297360-B2 Insulation film JSR CORPORATION (JP) 2007-11-20 — — US disclosed
EP-1188807-B1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORP (JP) 2007-10-17 — — EP disclosed
US-7153767-B2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2006-12-26 — — US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 — — US disclosed
EP-1253175-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-10-11 — — EP disclosed
EP-1146092-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-03-08 — — EP disclosed
US-6465368-B2 DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS JSR CORPORATION (JP) 2002-10-15 — — US disclosed
EP-1245638-A1 Composition for insulating film formation JSR Corporation (JP) 2002-10-02 — — EP disclosed
US-20020064953-A1 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR CORPORATION (JP) 2002-05-30 — — US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 — — US disclosed
EP-1188807-A2 Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing JSR Corporation (JP) 2002-03-20 — — EP disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 — — US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 — — US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 — — US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 — — EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 — — EP disclosed
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