SCHEMBL24760894

SCHEMBL24760894

C=CC1(N)C2CC3CC(C2)CC1C3

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.33
SLC22A2 O15244 1/20 0.33
SLC22A1 O15245 1/20 0.33
GRIN2D O15399 1/20 0.33
GRIN3B O60391 1/20 0.33
TSHR P16473 1/20 0.33
NFKB1 P19838 1/20 0.33
STAT6 P42226 1/20 0.33
GRIN1 Q05586 1/20 0.33
GRIN2A Q12879 1/20 0.33
GRIN2B Q13224 1/20 0.33
GRIN2C Q14957 1/20 0.33
GRIN3A Q8TCU5 1/20 0.33
SLC47A1 Q96FL8 1/20 0.33
SIGMAR1 Q99720 1/20 0.33
TP53 P04637 1/20 0.32
GAA P10253 1/20 0.32
MAPT P10636 1/20 0.32
POLB P06746 1/20 0.32
THRB P10828 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL493635 0.74 HSD11B1 (0.32) TP53GAAMAPTSMN1; SMN2
SCHEMBL26863267 0.73 HSD11B1 (0.32) LMNASLC22A2SLC22A1GRIN2DGRIN3B
SCHEMBL26863268 0.73 HSD11B1 (0.32) LMNASLC22A2SLC22A1GRIN2DGRIN3B
SCHEMBL24760895 0.73 PKM (0.35) LMNASLC22A2SLC22A1GRIN2DGRIN3B
SCHEMBL26869807 0.73 HSD11B1 (0.32) LMNASLC22A2SLC22A1GRIN2DGRIN3B
SCHEMBL26869806 0.73 HSD11B1 (0.32) LMNASLC22A2SLC22A1GRIN2DGRIN3B
SCHEMBL3147949 0.72 MAPT (0.34) TP53GAAMAPT
SCHEMBL24760896 0.72 LMNA (0.32) LMNASLC22A2SLC22A1GRIN2DGRIN3B
SCHEMBL24776305 0.69
SCHEMBL17338022 0.69 ALDH1A1 (0.32) SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024127977-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-20 WO disclosed
WO-2024122425-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT 東京応化工業株式会社 2024-06-13 WO disclosed
WO-2024043121-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND AND INTERMEDIATE THEREFOR 東京応化工業株式会社 2024-02-29 WO disclosed
WO-2024043098-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF 東京応化工業株式会社 2024-02-29 WO disclosed
WO-2023223897-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND 東京応化工業株式会社 2023-11-23 WO disclosed
WO-2023195407-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-12 WO disclosed
WO-2023176546-A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR 東京応化工業株式会社 2023-09-21 WO disclosed
WO-2023171670-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND 東京応化工業株式会社 2023-09-14 WO disclosed
WO-2023145535-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND 東京応化工業株式会社 2023-08-03 WO disclosed
WO-2022270627-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-12-29 WO disclosed
WO-2022264941-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-12-22 WO disclosed
WO-2022265002-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD 東京応化工業株式会社 2022-12-22 WO disclosed