SCHEMBL2479441

SCHEMBL2479441

CC(C)(C)c1ccccc1[I+]c1ccccc1C(C)(C)C.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CA2 P00918 15/20 0.37
CA1 P00915 14/20 0.37
HSD11B1 P28845 4/20 0.37
MMP1 P03956 1/20 0.33
MMP2 P08253 1/20 0.33
MMP9 P14780 1/20 0.33
MMP8 P22894 1/20 0.33
MMP13 P45452 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30385143 1.00 CA2 (0.37) CA2CA1HSD11B1MMP1MMP2
SCHEMBL1760814 1.00 CA2 (0.37) CA2CA1HSD11B1MMP1MMP2
SCHEMBL31651407 0.99 HSD11B1 (0.38) CA2CA1HSD11B1MMP1MMP2
SCHEMBL545789 0.99 HSD11B1 (0.38) CA2CA1HSD11B1MMP1MMP2
SCHEMBL30295388 0.92 CA2 (0.34) CA2CA1HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL29851847 0.84 HSD11B1 (0.43) HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL59634 0.84 HSD11B1 (0.43) HSD11B1
Perflubutane SCHEMBL5665288 0.83 ALDH1A1 (0.39) CA2HSD11B1
SCHEMBL29562559 0.83 CA1 (0.32) CA2CA1HSD11B1MMP1MMP2
SCHEMBL31627575 0.82 CA2 (0.38) CA2CA1HSD11B1MMP1MMP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8202678-B2 Wet developable bottom antireflective coating composition and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-06-19 US claimed
US-7651831-B2 Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-01-26 US claimed
US-20090291392-A1 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-11-26 US claimed
EP-2013659-A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF International Business Machines Corporation IBM (US) 2009-01-14 EP claimed
US-20080233514-A1 POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-09-25 US claimed
EP-1664923-A4 NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER IBM (US) 2008-08-27 EP claimed
WO-2007121456-A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-10-25 WO claimed
US-20070243484-A1 Wet developable bottom antireflective coating composition and method for use thereof GLOBALFOUNDRIES U.S. INC. 2007-10-18 US claimed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US claimed
US-7217496-B2 Fluorinated photoresist materials with improved etch resistant properties INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-05-15 US claimed
US-20050164507-A1 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-07-28 US claimed
US-20050153232-A1 Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-07-14 US claimed
WO-2005036261-A1 NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-04-21 WO claimed
US-20050058930-A1 Negative resist composition with fluorosulfonamide-containing polymer GLOBALFOUNDRIES U.S. INC. 2005-03-17 US claimed
US-6821718-B2 EXHIBIT HIGH RESISTANCE TO REACTIVE ION ETCHING IN EMPLOYING OXYGEN AND/OR CHLORINE INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-11-23 US claimed
US-20040048204-A1 Radiation sensitive silicon-containing negative resists and use thereof INTERNATIONAL BUSINESS MACHINES 2004-03-11 US claimed
US-6653045-B2 Negative resist containing a polysilsesquioxane polymer with pendant fused rings and sites for reaction with a crosslinking agent, an acid-sensitive glycolurils ascrosslinking agent, and a radiation sensitive generator INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-11-25 US claimed
US-20020115017-A1 Radiation sensitive silicon-containing negative resists and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2002-08-22 US claimed
US-6344305-B1 AMPLIFIED SILICON-CONTAINING NEGATIVE-TONE RESIST COMPOSITION OF AQUEOUS BASE SOLUBLE SILICON-CONTAINING POLYMER HAVING PHENOLIC GROUP FOR O-ALKYLATION; ACID CATALYZABLE CROSSLINKING AGENT; ACID GENERATOR; SOLVENT; PHOTOSENSITIZER INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-02-05 US claimed
US-6187505-B1 MIXTURE COMPRISING POLYSILSESQUIOXANE HAVING PHENOLIC GROUPS CROSSLINKABLE WITH ACID CATALYZABLE CURING AGENT, ACID GENERATOR, PHOTOSENSITIZER, A BASE AND SURFACTANT; PATTERN RESOLUTION WITH HIGH ASPECT RATIO INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-02-13 US claimed