Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 4/20 | 0.43 |
| ▸ | GPR3 | P46089 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | KCNH2 | Q12809 | 6/20 | 0.34 |
| ▸ | ACHE | P22303 | 6/20 | 0.34 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL29851847 | 1.00 | HSD11B1 (0.43) | HSD11B1GPR3ALDH1A1TSHRTDP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL1051928 | 0.92 | HSD11B1 (0.39) | HSD11B1GPR3ALDH1A1TSHRTDP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL29877212 | 0.91 | HSD11B1 (0.40) | HSD11B1GPR3ALDH1A1TSHRTDP1 | |
| SCHEMBL7908278 | 0.87 | ALDH1A1 (0.38) | HSD11B1ALDH1A1TSHRTDP1 | |
| Sulfuric Acid SCHEMBL8628602 | 0.87 | ALDH1A1 (0.38) | HSD11B1ALDH1A1TSHRTDP1 | |
| Sulfuric Acid SCHEMBL8628604 | 0.86 | TDP1 (0.41) | HSD11B1ALDH1A1TSHRTDP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL6833777 | 0.85 | HSD11B1 (0.38) | HSD11B1GPR3ALDH1A1TSHRTDP1 | |
| SCHEMBL9617862 | 0.85 | HSD11B1 (0.36) | HSD11B1ALDH1A1TSHRTDP1MEN1 | |
| SCHEMBL31651407 | 0.85 | HSD11B1 (0.38) | HSD11B1GPR3 | |
| SCHEMBL545789 | 0.85 | HSD11B1 (0.38) | HSD11B1GPR3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 742 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-16 | — | — | US | claimed |
| US-12535739-B2 | Method of forming photoresist pattern | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-27 | — | — | US | claimed |
| US-20240077802-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-07 | — | — | US | claimed |
| US-11635688-B2 | Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates | KAYAKU ADVANCED MATERIALS, INC. (US) | 2023-04-25 | — | — | US | claimed |
| US-11626293-B2 | Method of manufacturing a semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-04-11 | — | — | US | claimed |
| US-20220230889-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-21 | — | — | US | claimed |
| US-20150024326-A1 | PHOTOIMAGEABLE COMPOSITIONS AND PROCESSES FOR FABRICATION OF RELIEF PATTERNS ON LOW SURFACE ENERGY SUBSTRATES | KAYAKU ADVANCED MATERIALS, INC. | 2015-01-22 | — | — | US | claimed |
| US-8759415-B2 | Aromatic vinyl ether based reverse-tone step and flash imprint lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-06-24 | — | — | US | claimed |
| EP-2469337-B1 | Positive photosensitive resin composition, method for forming pattern, and electronic component | HITACHI CHEM DUPONT MICROSYS (JP) | 2014-01-22 | — | — | EP | claimed |
| WO-2013134104-A2 | PHOTOIMAGEABLE COMPOSITIONS AND PROCESSES FOR FABRICATION OF RELIEF PATTERNS ON LOW SURFACE ENERGY SUBSTRATES | MICROCHEM CORP. (US) | 2013-09-12 | — | — | WO | claimed |
| EP-0543762-B1 | Dry developable photoresist compositions and method for use thereof | IBM (US) | 2000-02-16 | — | — | EP | claimed |
| WO-1999036151-A1 | METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS | OLIN MICROELECTRONIC CHEMICALS, INC. (US) | 1999-07-22 | — | — | WO | claimed |
| US-5374500-A | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-12-20 | — | — | US | claimed |
| EP-0619522-A2 | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-10-12 | — | — | EP | claimed |
| US-5328807-A | Method of forming a pattern | HITICHI, LTD. (JP) | 1994-07-12 | — | — | US | claimed |
| US-5322765-A | Dry developable photoresist compositions and method for use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-06-21 | — | — | US | claimed |
| EP-0543762-A1 | Dry developable photoresist compositions and method for use thereof | International Business Machines Corporation (US) | 1993-05-26 | — | — | EP | claimed |
| US-5055439-A | PHOTOACID GENERATING COMPOSITION AND SENSITIZER THEREFOR | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1991-10-08 | — | — | US | claimed |
| EP-0435531-A2 | Photoacid generating composition and sensitizer therefor | International Business Machines Corporation (US) | 1991-07-03 | — | — | EP | claimed |
| EP-0425418-A2 | Base developable negative tone photoresist | International Business Machines Corporation (US) | 1991-05-02 | — | — | EP | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12535739-B2 | Method of forming photoresist pattern | DSTN, PFAS, FASN | HSD11B1 642/4885GPR3 3548/4885ALDH1A1 861/4885 |
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | DSTN, PFAS, DNTT | HSD11B1 491/4885GPR3 3429/4885ALDH1A1 616/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.