SCHEMBL545789

SCHEMBL545789

CC(C)(C)c1ccccc1[I+]c1ccccc1C(C)(C)C.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 5/20 0.38
CA2 P00918 13/20 0.36
CA1 P00915 12/20 0.36
MMP1 P03956 3/20 0.31
MMP2 P08253 3/20 0.31
MMP9 P14780 3/20 0.31
MMP8 P22894 3/20 0.31
MMP13 P45452 3/20 0.31
GPR3 P46089 1/20 0.30
CA5A P35218 1/20 0.30
CA9 Q16790 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31651407 1.00 HSD11B1 (0.38) HSD11B1CA2CA1MMP1MMP2
SCHEMBL30385143 0.99 CA2 (0.37) HSD11B1CA2CA1MMP1MMP2
SCHEMBL2479441 0.99 CA2 (0.37) HSD11B1CA2CA1MMP1MMP2
SCHEMBL1760814 0.99 CA2 (0.37) HSD11B1CA2CA1MMP1MMP2
SCHEMBL30295388 0.91 CA2 (0.34) HSD11B1CA2CA1
Trifluoromethanesulfonic Acid SCHEMBL29851847 0.85 HSD11B1 (0.43) HSD11B1GPR3
Trifluoromethanesulfonic Acid SCHEMBL59634 0.85 HSD11B1 (0.43) HSD11B1GPR3
Perflubutane SCHEMBL5665288 0.84 ALDH1A1 (0.39) HSD11B1CA2
SCHEMBL29563376 0.82 HSD11B1 (0.33) HSD11B1CA2CA1MMP1MMP2
SCHEMBL29562559 0.81 CA1 (0.32) HSD11B1CA2CA1MMP1MMP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 252 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2469337-B1 Positive photosensitive resin composition, method for forming pattern, and electronic component HITACHI CHEM DUPONT MICROSYS (JP) 2014-01-22 EP claimed
US-8202678-B2 Wet developable bottom antireflective coating composition and method for use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-06-19 US claimed
US-7651831-B2 Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-01-26 US claimed
US-20090291392-A1 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-11-26 US claimed
EP-2013659-A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF International Business Machines Corporation IBM (US) 2009-01-14 EP claimed
US-20080233514-A1 POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-09-25 US claimed
EP-1664923-A4 NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER IBM (US) 2008-08-27 EP claimed
WO-2007121456-A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-10-25 WO claimed
US-20070243484-A1 Wet developable bottom antireflective coating composition and method for use thereof GLOBALFOUNDRIES U.S. INC. 2007-10-18 US claimed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US claimed
US-20050164507-A1 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-07-28 US claimed
US-20050153232-A1 Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-07-14 US claimed
WO-2005036261-A1 NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-04-21 WO claimed
US-20050058930-A1 Negative resist composition with fluorosulfonamide-containing polymer GLOBALFOUNDRIES U.S. INC. 2005-03-17 US claimed
US-6821718-B2 EXHIBIT HIGH RESISTANCE TO REACTIVE ION ETCHING IN EMPLOYING OXYGEN AND/OR CHLORINE INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-11-23 US claimed
US-20040048204-A1 Radiation sensitive silicon-containing negative resists and use thereof INTERNATIONAL BUSINESS MACHINES 2004-03-11 US claimed
US-6653045-B2 Negative resist containing a polysilsesquioxane polymer with pendant fused rings and sites for reaction with a crosslinking agent, an acid-sensitive glycolurils ascrosslinking agent, and a radiation sensitive generator INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-11-25 US claimed
US-20020115017-A1 Radiation sensitive silicon-containing negative resists and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2002-08-22 US claimed
US-6344305-B1 AMPLIFIED SILICON-CONTAINING NEGATIVE-TONE RESIST COMPOSITION OF AQUEOUS BASE SOLUBLE SILICON-CONTAINING POLYMER HAVING PHENOLIC GROUP FOR O-ALKYLATION; ACID CATALYZABLE CROSSLINKING AGENT; ACID GENERATOR; SOLVENT; PHOTOSENSITIZER INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-02-05 US claimed
US-6187505-B1 MIXTURE COMPRISING POLYSILSESQUIOXANE HAVING PHENOLIC GROUPS CROSSLINKABLE WITH ACID CATALYZABLE CURING AGENT, ACID GENERATOR, PHOTOSENSITIZER, A BASE AND SURFACTANT; PATTERN RESOLUTION WITH HIGH ASPECT RATIO INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-02-13 US claimed