Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7172729 | 0.67 | — | — | |
| SCHEMBL20656 | 0.65 | TSHR (0.43) | ALDH1A1 | |
| SCHEMBL7177724 | 0.65 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL11070461 | 0.65 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL7549527 | 0.65 | TSHR (0.43) | ALDH1A1 | |
| SCHEMBL2365396 | 0.64 | ALDH1A1 (0.31) | ALDH1A1 | |
| SCHEMBL2417531 | 0.62 | — | — | |
| SCHEMBL3429854 | 0.62 | TSHR (0.40) | ALDH1A1 | |
| Fluoride SCHEMBL635869 | 0.62 | TSHR (0.40) | ALDH1A1 | |
| Hydrochloric Acid SCHEMBL7717766 | 0.62 | ALDH1A1 (0.33) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 187 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8846443-B2 | Atomic layer deposition of metal oxides for memory applications | INTERMOLECULAR, INC. (US) | 2014-09-30 | — | — | US | claimed |
| US-20130034947-A1 | ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS | INTERMOLECULAR, INC. (US) | 2013-02-07 | — | — | US | claimed |
| WO-2011117231-A1 | METHOD OF TREATING WASTE GASES | SOLVAY SA (BE) | 2011-09-29 | — | — | WO | claimed |
| US-6953743-B2 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | MICRON TECHNOLOGY, INC. (US) | 2005-10-11 | — | — | US | claimed |
| US-6930039-B2 | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug | MICRON TECHNOLOGY, INC. (US) | 2005-08-16 | — | — | US | claimed |
| US-6903010-B2 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | MICRON TECHNOLOGY, INC. (US) | 2005-06-07 | — | — | US | claimed |
| US-6881667-B2 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | MICRON TECHNOLOGY, INC. (US) | 2005-04-19 | — | — | US | claimed |
| US-6861351-B2 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | MICRON TECHNOLOGY, INC. (US) | 2005-03-01 | — | — | US | claimed |
| US-20040053486-A1 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | SANDHU GURTEJ S (US) | 2004-03-18 | — | — | US | claimed |
| US-20040053493-A1 | Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | SANDHU GURTEJ S (US) | 2004-03-18 | — | — | US | claimed |
| US-6291340-B1 | Method of forming low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer | MICRON TECHNOLOGY, INC. | 2001-09-18 | — | — | US | claimed |
| EP-1091018-A1 | Purification, analysis and deposition of titanium amides | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2001-04-11 | — | — | EP | claimed |
| US-6093615-A | Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug | MICRON TECHNOLOGY, INC. (US) | 2000-07-25 | — | — | US | claimed |
| US-6080446-A | Method of depositing titanium nitride thin film and CVD deposition apparatus | ANELVA CORPORATION (JP) | 2000-06-27 | — | — | US | claimed |
| US-5970378-A | CHEMICAL VAPOR DEPOSITION (CVD) METHOD EMPLOYING A TETRAKIS-DIALLYLAMIDO TITANIUM SOURCE MATERIAL | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 1999-10-19 | — | — | US | claimed |
| US-RE35785-E | ADMITTING MIXTURE OF VAPORIZED TETRAKIS-DIALKYLAMIDO-TITANIUM AND ACTIVATED SPECIES CREATED IN PLASMA DISCHARGE AT REMOTE LOCATION INTO VAPOR DEPOSITION CHAMBER TO DEPOSIT TITANIUM NITRIDE ON SUBSTRATE ON HEATED SUSCEPTOR PLATE | MICRON TECHNOLOGY, INC. (US) | 1998-05-05 | — | — | US | claimed |
| US-5733816-A | Method for depositing a tungsten layer on silicon | MICRON TECHNOLOGY, INC. (US) | 1998-03-31 | — | — | US | claimed |
| US-5723382-A | Method of making a low-resistance contact to silicon having a titanium silicide interface, an amorphous titanium nitride barrier layer and a conductive plug | SANDHU GURTEJ S (US) | 1998-03-03 | — | — | US | claimed |
| US-5399379-A | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity | MICRON SEMICONDUCTOR, INC. (US) | 1995-03-21 | — | — | US | claimed |
| US-5246881-A | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity | MICRON SEMICONDUCTOR, INC. (US) | 1993-09-21 | — | — | US | claimed |