SCHEMBL24909132

SCHEMBL24909132

C=C(C)C(F)(C(F)(F)S(=O)(=O)O)C(F)(F)S(=O)(=O)NC(=O)c1ccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O)cc1

nearest known ligand 0.33

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 1/20 0.33
MAPT P10636 2/20 0.32
HTT P42858 2/20 0.32
MEN1 O00255 1/20 0.32
GAA P10253 1/20 0.32
MAPK1 P28482 1/20 0.32
KMT2A Q03164 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CXCR2 P25025 1/20 0.32
STS P08842 2/20 0.32
ENPP3 O14638 1/20 0.31
ENPP1 P22413 1/20 0.31
ENPP2 Q13822 1/20 0.31
LMNA P02545 1/20 0.30
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
EGFR P00533 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23808361 0.87 ENPP1 (0.36) PTPN1MAPTHTTMEN1GAA
SCHEMBL25467901 0.84 CXCR2 (0.34) PTPN1MAPTHTTMEN1GAA
SCHEMBL29319689 0.83 CXCR2 (0.34) PTPN1MAPTHTTMEN1GAA
SCHEMBL25881636 0.82 SMN1; SMN2 (0.33) PTPN1MAPTHTTMEN1GAA
SCHEMBL26445899 0.82 CXCR2 (0.38) PTPN1MAPTHTTMEN1GAA
SCHEMBL25467937 0.82 STS (0.35) PTPN1MAPTHTTMEN1GAA
SCHEMBL26452260 0.81 CXCR2 (0.34) PTPN1MAPTHTTMEN1GAA
SCHEMBL26445970 0.81 ALOX15 (0.35) PTPN1MAPTHTTMEN1GAA
SCHEMBL25468209 0.78 CXCR2 (0.36) PTPN1MAPTHTTMEN1GAA
SCHEMBL26452047 0.76 CXCR2 (0.36) PTPN1MAPTHTTMEN1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023218970-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 富士フイルム株式会社 2023-11-16 WO disclosed
WO-2023002869-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIN, AND METHOD FOR PRODUCING RESIN 富士フイルム株式会社 2023-01-26 WO disclosed