SCHEMBL2115587

SCHEMBL2115587

CO[SiH2]Oc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.50
LTA4H P09960 5/20 0.42
TSHR P16473 1/20 0.41
LMNA P02545 1/20 0.37
KCNA3 P22001 1/20 0.35
TRPA1 O75762 1/20 0.33
CA5A P35218 1/20 0.33
CA5B Q9Y2D0 1/20 0.33
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA7 P43166 1/20 0.33
CA9 Q16790 1/20 0.33
CA14 Q9ULX7 1/20 0.33
MAOB P27338 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32
NR1H2 P55055 1/20 0.32
BAX Q07812 1/20 0.32
MAOA P21397 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Naphthalene SCHEMBL28994859 0.93 CA4 (0.44) CA4LTA4HTSHRLMNAKCNA3
SCHEMBL707758 0.83 LTA4H (0.50) CA4LTA4HTSHRLMNAKCNA3
Hydrochloric Acid SCHEMBL9709369 0.80 LTA4H (0.47) CA4LTA4HTSHRLMNAKCNA3
SCHEMBL9715684 0.78 LTA4H (0.45) CA4LTA4HTSHRLMNAKCNA3
Butane SCHEMBL2501351 0.77 LTA4H (0.43) CA4LTA4HTSHRLMNAKCNA3
Naphthalene SCHEMBL28994860 0.76 CYP2A6 (0.44) CA4LTA4HTSHRKCNA3CA5A
Biphenyl SCHEMBL2499426 0.76 ALDH1A1 (0.50) CA4LTA4HTSHRKCNA3CA5A
SCHEMBL3464324 0.74 LTA4H (0.41) CA4LTA4HTSHRLMNAKCNA3
SCHEMBL10568357 0.73 LMNA (0.42) CA4LTA4HTSHRLMNAKCNA3
SCHEMBL2115179 0.73 LTA4H (0.43) CA4LTA4HTSHRLMNAKCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
CN-109715680-A The method for preparing high-cis -1,4- polydiene with the carbon monoxide-olefin polymeric based on lanthanide series 株式会社普利司通 2019-05-03 CN claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
CN-116075368-A Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2023-05-05 CN disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
CN-110249004-B Polyimide precursor composition 东京应化工业株式会社 2022-07-19 CN disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-4222930-A VULCANIZABLE RUBBER, SILICEOUS FILLER DEUTSCHE GOLD- UND SILBER-SCHEIDEANSTALT VORMALS ROESSLER (DE) 1980-09-16 US disclosed
US-4152347-A REINFORCING AGENTS IN VULCANIZABLE RUBBER MIXTURES WHICH CONTAIN A SILICA FILLER DEUTSCHE GOLD- UND SILBER-SCHEIDEANSTALT VORMALS ROESSLER (DE) 1979-05-01 US disclosed