Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 6/20 | 0.33 |
| ▸ | LMNA | P02545 | 4/20 | 0.33 |
| ▸ | HPGD | P15428 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 6/20 | 0.32 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.32 |
| ▸ | PABPC1 | P11940 | 1/20 | 0.32 |
| ▸ | FABP4 | P15090 | 1/20 | 0.32 |
| ▸ | HTT | P42858 | 4/20 | 0.32 |
| ▸ | GAA | P10253 | 3/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.32 |
| ▸ | PKM | P14618 | 1/20 | 0.32 |
| ▸ | CRHBP | P24387 | 1/20 | 0.32 |
| ▸ | CRHR2 | Q13324 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.31 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.31 |
| ▸ | MEN1 | O00255 | 2/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3963558 | 0.85 | CA1 (0.34) | CYP1A2SMN1; SMN2LMNAHPGDTSHR | |
| SCHEMBL3971011 | 0.84 | CA1 (0.36) | CYP1A2LMNATSHRHTTALDH1A1 | |
| SCHEMBL2515162 | 0.82 | CYP1A2 (0.39) | CYP1A2SMN1; SMN2MAPTKDM4EPABPC1 | |
| SCHEMBL2516849 | 0.81 | SLC22A12 (0.40) | HPGDKDM4E | |
| SCHEMBL2519450 | 0.81 | CA1 (0.44) | CYP1A2TSHRKDM4EHSD17B10ALDH1A1 | |
| SCHEMBL2514812 | 0.80 | CTSB (0.39) | CYP1A2LMNAHPGDMAPK1MAPT | |
| SCHEMBL5410134 | 0.75 | PSIP1 (0.45) | SMN1; SMN2TSHRMAPTHTTHSD17B10 | |
| SCHEMBL6564923 | 0.72 | CA1 (0.41) | CYP1A2TSHRKDM4EHSD17B10ALDH1A1 | |
| SCHEMBL6938489 | 0.71 | CYP1A2 (0.43) | CYP1A2FABP4GAAMEN1KMT2A | |
| SCHEMBL3970505 | 0.69 | IMPDH2 (0.35) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2021106537-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2021-06-03 | — | — | WO | disclosed |
| US-9134611-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-09-15 | — | — | US | disclosed |
| US-9046769-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140371466-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8859191-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-20140048512-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-02-20 | — | — | US | disclosed |
| US-8334338-B2 | Composition for forming resist lower layer film | JSR CORPORATION (JP) | 2012-12-18 | — | — | US | disclosed |
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20110251323-A1 | COMPOSITION FOR FORMING RESIST LOWER LAYER FILM | JSR CORPORATION | 2011-10-13 | — | — | US | disclosed |
| US-20100178620-A1 | INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| US-6242161-B1 | ABSORPTION COATINGS USING COPOLYMERS | JSR CORPORATION (JP) | 2001-06-05 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | ADAM9, MUS81, ADAM17 | CYP1A2 4522/4885SMN1; SMN2 3671/4885LMNA 455/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.