SCHEMBL2516237

SCHEMBL2516237

CCCOC(=O)Oc1ccc(S2(OS(=O)(=O)C(F)(F)F)CCCC2)c2ccccc12

nearest known ligand 0.32

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
ELANE P08246 2/20 0.32
CCR8 P51685 1/20 0.32
LMNA P02545 1/20 0.32
PDK2 Q15119 1/20 0.31
ALOX5 P09917 1/20 0.31
MMP2 P08253 1/20 0.31
MMP9 P14780 1/20 0.31
MMP14 P50281 1/20 0.31
FABP4 P15090 6/20 0.30
FABP5 Q01469 6/20 0.30
TYMS P04818 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2521409 0.94 ELANE (0.39) ELANEFABP4FABP5
SCHEMBL2958135 0.92 TYMS (0.38) MEN1KMT2AELANECCR8LMNA
SCHEMBL3974172 0.90
SCHEMBL3968984 0.89
SCHEMBL2519985 0.87 KDM4E (0.36) CCR8FABP4
SCHEMBL703653 0.86 KMT2A (0.44) MEN1KMT2ALMNAFABP4FABP5
SCHEMBL2519726 0.85 BRD4 (0.31)
SCHEMBL3974205 0.85 ELANE (0.36) ELANE
SCHEMBL2519048 0.84
SCHEMBL3971523 0.84 ELANE (0.36) ELANE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-8691496-B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film JSR CORPORATION (JP) 2014-04-08 US disclosed
US-8663905-B2 Pattern-forming method JSR CORPORATION (JP) 2014-03-04 US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 US disclosed
US-20130004900-A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM JSR CORPORATION (JP) 2013-01-03 US disclosed
US-8334338-B2 Composition for forming resist lower layer film JSR CORPORATION (JP) 2012-12-18 US disclosed
US-8288073-B2 Pattern forming method JSR CORPORATION (JP) 2012-10-16 US disclosed
US-20110251323-A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM JSR CORPORATION 2011-10-13 US disclosed
US-7749681-B2 Composition for forming lower layer film and pattern forming method JSR CORPORATION (JP) 2010-07-06 US disclosed
US-20100081082-A1 COMPOSITION FOR RESIST UNDER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION JSR CORPORATION (JP) 2010-04-01 US disclosed
EP-1641849-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS Symyx Technologies, Inc. (US) 2006-04-05 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
US-6908722-B2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-06-21 US disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
EP-1386904-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR Corporation (JP) 2004-02-04 EP disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA MEN1 3910/4885KMT2A 1845/4885ELANE 3206/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.