SCHEMBL2519985

SCHEMBL2519985

COC(=O)Oc1ccc(S2(OS(=O)(=O)C(F)(F)F)CCCC2)c2ccccc12

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.36
HPGD P15428 1/20 0.36
HSD17B10 Q99714 1/20 0.36
FABP4 P15090 12/20 0.33
PKM P14618 1/20 0.31
NPC1 O15118 1/20 0.31
TSHR P16473 1/20 0.31
RAB9A P51151 1/20 0.31
KEAP1 Q14145 1/20 0.31
NFE2L2 Q16236 1/20 0.31
CCR8 P51685 1/20 0.30
MTNR1A P48039 1/20 0.30
MTNR1B P49286 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2519048 0.91
SCHEMBL2519726 0.89 BRD4 (0.31)
SCHEMBL3970533 0.89 CA1 (0.32) KDM4EHPGDHSD17B10
SCHEMBL2958135 0.89 TYMS (0.38) KDM4EHPGDHSD17B10FABP4NPC1
SCHEMBL3970606 0.88 CA1 (0.32) KDM4EHPGDHSD17B10
SCHEMBL2516237 0.87 MEN1 (0.32) FABP4CCR8
SCHEMBL36503 0.86 ALDH1A1 (0.39) FABP4NPC1
SCHEMBL2521409 0.85 ELANE (0.39) FABP4TSHR
SCHEMBL2521333 0.83 ALDH1A1 (0.31)
SCHEMBL2521576 0.81 HTT (0.32) KDM4EHPGDTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-8691496-B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film JSR CORPORATION (JP) 2014-04-08 US disclosed
US-8663905-B2 Pattern-forming method JSR CORPORATION (JP) 2014-03-04 US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 US disclosed
US-20130004900-A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM JSR CORPORATION (JP) 2013-01-03 US disclosed
US-8334338-B2 Composition for forming resist lower layer film JSR CORPORATION (JP) 2012-12-18 US disclosed
US-8288073-B2 Pattern forming method JSR CORPORATION (JP) 2012-10-16 US disclosed
US-20110251323-A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM JSR CORPORATION 2011-10-13 US disclosed
US-7749681-B2 Composition for forming lower layer film and pattern forming method JSR CORPORATION (JP) 2010-07-06 US disclosed
US-20100081082-A1 COMPOSITION FOR RESIST UNDER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION JSR CORPORATION (JP) 2010-04-01 US disclosed
US-7037994-B2 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2006-05-02 US disclosed
EP-1641849-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS Symyx Technologies, Inc. (US) 2006-04-05 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
US-6908722-B2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-06-21 US disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA KDM4E 4264/4885HPGD 3253/4885HSD17B10 3718/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.