SCHEMBL2522784

SCHEMBL2522784

CCc1cccc([SiH2]O)c1C

nearest known ligand 0.46

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 4/20 0.46
GABRB2 P47870 4/20 0.46
NLRP3 Q96P20 2/20 0.37
ANPEP P15144 2/20 0.33
DPP4 P27487 2/20 0.33
PDCD1 Q15116 1/20 0.33
CD274 Q9NZQ7 1/20 0.33
PDK2 Q15119 1/20 0.33
DAO P14920 1/20 0.33
PTGS2 P35354 1/20 0.32
CLCN2 P51788 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2520038 0.84 DAO (0.35) GABRA1GABRB2PDCD1CD274DAO
SCHEMBL2524117 0.81 CYP3A4 (0.41) PTGS2
SCHEMBL6114437 0.80 GABRA1 (0.46) GABRA1GABRB2CLCN2
SCHEMBL9745359 0.79 GABRA1 (0.46) GABRA1GABRB2ANPEPDPP4DAO
SCHEMBL2522528 0.79 GABRA1 (0.52) GABRA1GABRB2PDCD1CD274
SCHEMBL599099 0.77 GABRA1 (0.57) GABRA1GABRB2NLRP3PDCD1CD274
SCHEMBL2522716 0.75 GABRA1 (0.42) GABRA1GABRB2DAO
SCHEMBL273305 0.75 GABRA1 (0.42) GABRA1GABRB2ANPEPDPP4DAO
Ammonia Solution, Strong SCHEMBL9357829 0.74 GABRA1 (0.55) GABRA1GABRB2NLRP3PDCD1CD274
Water SCHEMBL28182555 0.74 GABRA1 (0.55) GABRA1GABRB2NLRP3PDCD1CD274

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113168101-B Photosensitive resin composition, method for producing pattern cured film, interlayer insulating film, coverlay, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2025-02-18 CN disclosed
CN-113168102-B Photosensitive resin composition, method for producing pattern cured product, interlayer insulating film, coverlay, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2024-11-19 CN disclosed
CN-114502617-B Polyimide precursor, photosensitive resin composition, interlayer insulating film, covercoat, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2024-05-03 CN disclosed
CN-114207038-B Resin composition, method for producing cured product, pattern cured product, interlayer insulating film, covercoat, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2024-03-22 CN disclosed
CN-116710498-A Polyimide precursor resin composition and method for producing same 旭化成株式会社 2023-09-05 CN disclosed
CN-113820920-B Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2023-07-04 CN disclosed
US-9786576-B2 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device HITACHI CHEMICAL COMPANY, LTD (JP) 2017-10-10 US disclosed
US-20170165879-A1 RESIN PRECURSOR, RESIN COMPOSITION CONTAINING SAME, POLYIMIDE RESIN MEMBRANE, RESIN FILM, AND METHOD FOR PRODUCING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2017-06-15 US disclosed
US-9274422-B2 Photosensitive resin composition, method for forming pattern-cured film using photosensitive resin composition, and electronic component HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2016-03-01 US disclosed
US-20140120462-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN-CURED FILM USING PHOTOSENSITIVE RESIN COMPOSITION, AND ELECTRONIC COMPONENT HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2014-05-01 US disclosed
EP-2221666-B1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, AND SEMICONDUCTOR DEVICE HITACHI CHEMICAL CO LTD (JP) 2013-09-18 EP disclosed
US-20110250396-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE RESONAC CORPORATION (JP) 2011-10-13 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed